Chin. J. Semicond. > 2006, Volume 27 > Issue 3 > 536-540
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Fabrication and Characteristics of In2O3 Nanowires

Xie Zili, Zhang Rong, Gao Chao, Liu Bin, Li Liang, Xiu Xiangqian, Zhu Shunming, Gu Shulin, Han Ping, Jiang Ruolian, Shi Yi and Zheng Youdou

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Abstract: In2O3 nanowires are fabricated successfully with a high temperature tube furnace.SEM photos show the formation of the nanowires.XRD analyses indicate that the In2O3 nanowires are cubic crystals.XPS analyses indicate that there are many oxygen defects in the In2O3 nanowires.The In2O3 nanowires can emit very bright ultraviolet light at 396nm,which is detected by PL.The emission and reaction mechanisms are discussed in detail at last.

Key words: In2O3, nanowires, XRD, SEM

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    Received: 20 August 2015 Revised: Online: Published: 01 March 2006

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      Article Navigation >  Journal of Semiconductors  > 2006  >  27(3): 536-540
      Xie Zili, Zhang Rong, Gao Chao, Liu Bin, Li Liang, Xiu Xiangqian, Zhu Shunming, Gu Shulin, Han Ping, Jiang Ruolian, Shi Yi, Zheng Youdou. Fabrication and Characteristics of In2O3 Nanowires[J]. Journal of Semiconductors, 2006, In Press. Xie Z L, Zhang R, Gao C, Liu B, Li L, Xiu X Q, Zhu S M, Gu S L, Han P, Jiang R L, Shi Y, Zheng Y D. Fabrication and Characteristics of In2O3 Nanowires[J]. Chin. J. Semicond., 2006, 27(3): 536.Export: BibTex EndNote
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      Xie Zili, Zhang Rong, Gao Chao, Liu Bin, Li Liang, Xiu Xiangqian, Zhu Shunming, Gu Shulin, Han Ping, Jiang Ruolian, Shi Yi, Zheng Youdou. Fabrication and Characteristics of In2O3 Nanowires[J]. Journal of Semiconductors, 2006, In Press.

      Xie Z L, Zhang R, Gao C, Liu B, Li L, Xiu X Q, Zhu S M, Gu S L, Han P, Jiang R L, Shi Y, Zheng Y D. Fabrication and Characteristics of In2O3 Nanowires[J]. Chin. J. Semicond., 2006, 27(3): 536.
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      Fabrication and Characteristics of In2O3 Nanowires

      • Key Laboratory of Advanced Photonic and Electronic Materials of Jiangsu Province,Department of Physics, Nanjing University, Nanjing 210093, China

      • Key Laboratory of Advanced Photonic and Electronic Materials of Jiangsu Province,Department of Physics, Nanjing University, Nanjing 210094, China

      • Key Laboratory of Advanced Photonic and Electronic Materials of Jiangsu Province,Department of Physics, Nanjing University, Nanjing 210095, China

      • Key Laboratory of Advanced Photonic and Electronic Materials of Jiangsu Province,Department of Physics, Nanjing University, Nanjing 210096, China

      • Key Laboratory of Advanced Photonic and Electronic Materials of Jiangsu Province,Department of Physics, Nanjing University, Nanjing 210097, China

      • Key Laboratory of Advanced Photonic and Electronic Materials of Jiangsu Province,Department of Physics, Nanjing University, Nanjing 210098, China

      • Key Laboratory of Advanced Photonic and Electronic Materials of Jiangsu Province,Department of Physics, Nanjing University, Nanjing 210099, China

      • Key Laboratory of Advanced Photonic and Electronic Materials of Jiangsu Province,Department of Physics, Nanjing University, Nanjing 210100, China

      • Key Laboratory of Advanced Photonic and Electronic Materials of Jiangsu Province,Department of Physics, Nanjing University, Nanjing 210101, China

      • Key Laboratory of Advanced Photonic and Electronic Materials of Jiangsu Province,Department of Physics, Nanjing University, Nanjing 210102, China

      • Key Laboratory of Advanced Photonic and Electronic Materials of Jiangsu Province,Department of Physics, Nanjing University, Nanjing 210103, China

      • Key Laboratory of Advanced Photonic and Electronic Materials of Jiangsu Province,Department of Physics, Nanjing University, Nanjing 210104, China

      • Received Date: 2015-08-20

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