| Citation: |
Gao Wei, Guo Weiling, Zhu Yanxu, Jiang Wenjing, Shen Guangdi. Reliability of AlGaInP light emitting diodes with an ITO current spreading layer[J]. Journal of Semiconductors, 2009, 30(6): 064004. doi: 10.1088/1674-4926/30/6/064004
Gao W, Guo W L, Zhu Y X, Jiang W J, Shen G D. Reliability of AlGaInP light emitting diodes with an ITO current spreading layer[J]. J. Semicond., 2009, 30(6): 064004. doi: 10.1088/1674-4926/30/6/064004.
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Reliability of AlGaInP light emitting diodes with an ITO current spreading layer
doi: 10.1088/1674-4926/30/6/064004
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Abstract
Three aging experiments were performed for AlGaInP light emitting diodes (LED) with or without indium tin oxide (ITO), which is used as a current spreading layer. It was found that the voltage of the LED with an ITO film increased at a high current stressing, while there was little change for that of the LED without the ITO. The results of the LEDs with different thicknesses of the ITO film show that the LED with a thicker ITO has a higher reliability. The main reason for the voltage increase of the LED with the ITO film might be the current crowding in the ITO film around the P-type electrode.-
Keywords:
- indium tin oxide,
- AlGaInP,
- light-emitting diode,
- reliability
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References
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Proportional views
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