| Citation: |
Chuai Rongyan, Liu Bin, Liu Xiaowei, Sun Xianlong, Shi Changzhi, Yang Lijian. Tunnelling piezoresistive effect of grain boundary in polysilicon nano-films[J]. Journal of Semiconductors, 2010, 31(3): 032002. doi: 10.1088/1674-4926/31/3/032002
Chuai R Y, Liu B, Liu X W, Sun X L, Shi C Z, Yang L J. Tunnelling piezoresistive effect of grain boundary in polysilicon nano-films[J]. J. Semicond., 2010, 31(3): 032002. doi: 10.1088/1674-4926/31/3/032002.
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Tunnelling piezoresistive effect of grain boundary in polysilicon nano-films
doi: 10.1088/1674-4926/31/3/032002
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Abstract
The experiment results indicate that the gauge factor of highly boron doped polysilicon nanofilm is bigger than that of monocrystalline silicon with the same doping concentration, and increases with the grain size decreasing. To apply the unique properties reasonably in the fabrication of piezoresistive devices, it was expounded based on the analysis of energy band structure that the properties were caused by the tunnel current which varies with the strain change forming a tunnelling piezoresistive effect. Finally, a calculation method of piezoresistance coefficients around grain boundaries was presented, and then the experiment results of polysilicon nanofilms were explained theoretically. -
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