Chin. J. Semicond. > 2006, Volume 27 > Issue 9 > 1521-1525

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MOCVD-Grown AlGaN/AlN/GaN HEMT Structure with High Mobility GaN Thin Layer as Channel on SiC

Wang Xiaoliang, Hu Guoxin, Ma Zhiyong, Xiao Hongling, Wang Cuimei, Luo Weijun, Liu Xinyu, Chen Xiaojuan, Li Jianping, Li Jinmin, Qian He and Wang Zhanguo

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Abstract: AlGaN/AlN/GaN high electron mobility transistor (HEMT) structures with a high-mobility GaN thin layer as a channel are grown on high resistive 6H-SiC substrates by metalorganic chemical vapor deposition.The HEMT structure exhibits a typical two-dimensional electron gas (2DEG) mobility of 1944cm2/(V·s) at room temperature and 11588cm2/(V·s) at 80K with almost equal 2DEG concentrations of about 1.03E13cm-2.High crystal quality of the HEMT structures is confirmed by triple-crystal X-ray diffraction analysis.Atomic force microscopy measurements reveal a smooth AlGaN surface with a root-mean-square roughness of 0.27nm for a scan area of 10μm×10μm.HEMT devices with 0.8μm gate length and 1.2mm gate width are fabricated using the structures.A maximum drain current density of 957mA/mm and an extrinsic transconductance of 267mS/mm are obtained.

Key words: AlGaN/GaNHEMTMOCVDpower deviceSiC substrates

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    Received: 18 August 2015 Revised: 11 May 2006 Online: Published: 01 September 2006

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      Wang Xiaoliang, Hu Guoxin, Ma Zhiyong, Xiao Hongling, Wang Cuimei, Luo Weijun, Liu Xinyu, Chen Xiaojuan, Li Jianping, Li Jinmin, Qian He, Wang Zhanguo. MOCVD-Grown AlGaN/AlN/GaN HEMT Structure with High Mobility GaN Thin Layer as Channel on SiC[J]. Journal of Semiconductors, 2006, In Press. Wang X L, Hu G X, Ma Z Y, Xiao H L, Wang C M, Luo W J, Liu X Y, Chen X J, Li J P, Li J M, Qian H, Wang Z G. MOCVD-Grown AlGaN/AlN/GaN HEMT Structure with High Mobility GaN Thin Layer as Channel on SiC[J]. Chin. J. Semicond., 2006, 27(9): 1521.Export: BibTex EndNote
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      Wang Xiaoliang, Hu Guoxin, Ma Zhiyong, Xiao Hongling, Wang Cuimei, Luo Weijun, Liu Xinyu, Chen Xiaojuan, Li Jianping, Li Jinmin, Qian He, Wang Zhanguo. MOCVD-Grown AlGaN/AlN/GaN HEMT Structure with High Mobility GaN Thin Layer as Channel on SiC[J]. Journal of Semiconductors, 2006, In Press.

      Wang X L, Hu G X, Ma Z Y, Xiao H L, Wang C M, Luo W J, Liu X Y, Chen X J, Li J P, Li J M, Qian H, Wang Z G. MOCVD-Grown AlGaN/AlN/GaN HEMT Structure with High Mobility GaN Thin Layer as Channel on SiC[J]. Chin. J. Semicond., 2006, 27(9): 1521.
      Export: BibTex EndNote

      MOCVD-Grown AlGaN/AlN/GaN HEMT Structure with High Mobility GaN Thin Layer as Channel on SiC

      • Received Date: 2015-08-18
      • Accepted Date: 2006-04-04
      • Revised Date: 2006-05-11
      • Published Date: 2006-10-12

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