SEMICONDUCTOR DEVICES

A strained Si-channel NMOSFET with low field mobility enhancement of about 140% using a SiGe virtual substrate

Cui Wei, Tang Zhaohuan, Tan Kaizhou, Zhang Jing, Zhong Yi, Hu Huiyong, Xu Shiliu, Li Ping and Hu Gangyi

+ Author Affiliations

PDF

Abstract: A fully standard CMOS integrated strained Si-channel NMOSFET has been demonstrated. By adjusting the thickness of graded SiGe, modifying the channel doping concentration, changing the Ge fraction of the relaxed SiGe layer and forming a p-well by multiple implantation technology, a surface strained Si-channel NMOSFET was fabricated, of which the low field mobility was enhanced by 140%, compared with the bulk-Si control device. Strained NMOSFET and PMOSFET were used to fabricate a strained CMOS inverter based on a SiGe virtual substrate. Test results indicated that the strained CMOS converter had a drain leakage current much lower than the Si devices, and the device exhibited wonderful on/off-state voltage transmission characteristics.

Key words: CMOS inverterstrained Simobility enhancementSiGe virtual substraterelaxed layer

[1]
[2]
[3]
[4]
[5]
[6]
[7]
[8]
  • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 3902 Times PDF downloads: 1647 Times Cited by: 0 Times

    History

    Received: 20 August 2015 Revised: 07 May 2012 Online: Published: 01 September 2012

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Cui Wei, Tang Zhaohuan, Tan Kaizhou, Zhang Jing, Zhong Yi, Hu Huiyong, Xu Shiliu, Li Ping, Hu Gangyi. A strained Si-channel NMOSFET with low field mobility enhancement of about 140% using a SiGe virtual substrate[J]. Journal of Semiconductors, 2012, 33(9): 094005. doi: 10.1088/1674-4926/33/9/094005 Cui W, Tang Z H, Tan K Z, Zhang J, Zhong Y, Hu H Y, Xu S L, Li P, Hu G Y. A strained Si-channel NMOSFET with low field mobility enhancement of about 140% using a SiGe virtual substrate[J]. J. Semicond., 2012, 33(9): 094005. doi: 10.1088/1674-4926/33/9/094005.Export: BibTex EndNote
      Citation:
      Cui Wei, Tang Zhaohuan, Tan Kaizhou, Zhang Jing, Zhong Yi, Hu Huiyong, Xu Shiliu, Li Ping, Hu Gangyi. A strained Si-channel NMOSFET with low field mobility enhancement of about 140% using a SiGe virtual substrate[J]. Journal of Semiconductors, 2012, 33(9): 094005. doi: 10.1088/1674-4926/33/9/094005

      Cui W, Tang Z H, Tan K Z, Zhang J, Zhong Y, Hu H Y, Xu S L, Li P, Hu G Y. A strained Si-channel NMOSFET with low field mobility enhancement of about 140% using a SiGe virtual substrate[J]. J. Semicond., 2012, 33(9): 094005. doi: 10.1088/1674-4926/33/9/094005.
      Export: BibTex EndNote

      A strained Si-channel NMOSFET with low field mobility enhancement of about 140% using a SiGe virtual substrate

      doi: 10.1088/1674-4926/33/9/094005
      Funds:

      The National Basic Research Program of China (973 Program)

      • Received Date: 2015-08-20
      • Accepted Date: 2012-02-17
      • Revised Date: 2012-05-07
      • Published Date: 2012-08-21

      Catalog

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return