| Citation: |
Xu Hui, Feng Jun, Liu Quan, Li Wei. A 3.125-Gb/s inductorless transimpedance amplifier for optical communication in 0.35 μm CMOS[J]. Journal of Semiconductors, 2011, 32(10): 105003. doi: 10.1088/1674-4926/32/10/105003
Xu H, Feng J, Liu Q, Li W. A 3.125-Gb/s inductorless transimpedance amplifier for optical communication in 0.35 μm CMOS[J]. J. Semicond., 2011, 32(10): 105003. doi: 10.1088/1674-4926/32/10/105003.
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A 3.125-Gb/s inductorless transimpedance amplifier for optical communication in 0.35 μm CMOS
doi: 10.1088/1674-4926/32/10/105003
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Abstract
A 3.125-Gb/s transimpedance amplifier (TIA) for an optical communication system is realized in 0.35 μm CMOS technology. The proposed TIA employs a regulated cascode configuration as the input stage, and adopts DC-cancellation techniques to stabilize the DC operating point. In addition, noise optimization is processed. The on-wafer measurement results show the transimpedance gain of 54.2 dBΩ and -3 dB bandwidth of 2.31 GHz. The measured average input referred noise current spectral density is about 18.8 pA/√Hz. The measured eye diagram is clear and symmetrical for 2.5-Gb/s and 3.125-Gb/s PRBS. Under a single 3.3-V supply voltage, the TIA consumes only 58.08 mW, including 20 mW from the output buffer. The whole die area is 465 × 435 μm2. -
References
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