SEMICONDUCTOR INTEGRATED CIRCUITS

An asymmetrical sensing scheme for 1T1C FRAM to increase the sense margin

Jia Ze, Zou Zhongren, Ren Tianling and Chen Hongyi

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Abstract: A novel asymmetrical current-based sensing scheme for 1T1C FRAM is proposed, in which the two input transistors are not the same size and a feedback NMOS is added at the reference side of the sense amplifier. Compared with the conventional symmetrical scheme in Ref. [8], the proposed scheme increases the sense margin of the readout current by 53.9% and decreases the sensing power consumption by 14.1%, at the cost of an additional 7.89% area of the sensing scheme. An experimental FRAM prototype utilizing the proposed asymmetrical scheme is implemented in a 0.35 μm three metal process, in which the function of the prototype is verified.

Key words: FRAMsense margincurrent-based sense amplifierasymmetrical

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    Received: 18 August 2015 Revised: 26 June 2010 Online: Published: 01 November 2010

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      Jia Ze, Zou Zhongren, Ren Tianling, Chen Hongyi. An asymmetrical sensing scheme for 1T1C FRAM to increase the sense margin[J]. Journal of Semiconductors, 2010, 31(11): 115001. doi: 10.1088/1674-4926/31/11/115001 Jia Z, Zou Z R, Ren T L, Chen H Y. An asymmetrical sensing scheme for 1T1C FRAM to increase the sense margin[J]. J. Semicond., 2010, 31(11): 115001. doi:  10.1088/1674-4926/31/11/115001.Export: BibTex EndNote
      Citation:
      Jia Ze, Zou Zhongren, Ren Tianling, Chen Hongyi. An asymmetrical sensing scheme for 1T1C FRAM to increase the sense margin[J]. Journal of Semiconductors, 2010, 31(11): 115001. doi: 10.1088/1674-4926/31/11/115001

      Jia Z, Zou Z R, Ren T L, Chen H Y. An asymmetrical sensing scheme for 1T1C FRAM to increase the sense margin[J]. J. Semicond., 2010, 31(11): 115001. doi:  10.1088/1674-4926/31/11/115001.
      Export: BibTex EndNote

      An asymmetrical sensing scheme for 1T1C FRAM to increase the sense margin

      doi: 10.1088/1674-4926/31/11/115001
      • Received Date: 2015-08-18
      • Accepted Date: 2010-06-03
      • Revised Date: 2010-06-26
      • Published Date: 2010-10-31

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