| Citation: |
Yuan Yujie, Hou Guofu, Zhang Jianjun, Xue Junming, Cao Liran, Zhao Ying, Geng Xinhua. Optimization of n/i and i/p buffer layers in n–i–p hydrogenated microcrystalline silicon solar cells[J]. Journal of Semiconductors, 2009, 30(3): 034007. doi: 10.1088/1674-4926/30/3/034007
Yuan Y J, Hou G F, Zhang J J, Xue J M, Cao L R, Zhao Y, Geng X H. Optimization of n/i and i/p buffer layers in n–i–p hydrogenated microcrystalline silicon solar cells[J]. J. Semicond., 2009, 30(3): 034007. doi: 10.1088/1674-4926/30/3/034007.
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Optimization of n/i and i/p buffer layers in n–i–p hydrogenated microcrystalline silicon solar cells
doi: 10.1088/1674-4926/30/3/034007
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Abstract
Hydrogenated microcrystalline silicon ( c-Si:H) intrinsic films and solar cells with n–i–p configuration were prepared by plasma enhanced chemical vapor deposition (PECVD). The influence of n/i and i/p buffer layers on the c-Si:H cell performance was studied in detail. The experimental results demonstrated that the efficiency is much improved when there is a higher crystallinity at n/i interface and an optimized a-Si:H buffer layer at i/p interface. By combining the above methods, the performance of c-Si:H single-junction and a-Si:H/ c-Si:H tandem solar cells has been significantly improved.-
Keywords:
- microcrystalline silicon
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