| Citation: |
Liu Mengxin, Han Zhengsheng, Bi Jinshun, Fan Xuemei, Liu Guang, Du Huan. Effect of total ionizing dose radiation on the 0.25 μm RF PDSOI nMOSFETs with thin gate oxide[J]. Journal of Semiconductors, 2009, 30(1): 014004. doi: 10.1088/1674-4926/30/1/014004
Liu M X, Han Z S, Bi J S, Fan X M, Liu G, Du H. Effect of total ionizing dose radiation on the 0.25 μm RF PDSOI nMOSFETs with thin gate oxide[J]. J. Semicond., 2009, 30(1): 014004. doi: 10.1088/1674-4926/30/1/014004.
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Effect of total ionizing dose radiation on the 0.25 μm RF PDSOI nMOSFETs with thin gate oxide
doi: 10.1088/1674-4926/30/1/014004
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Abstract
Thin gate oxide radio frequency(RF) PDSOI nMOSFETs that are suitable for integration with 0.1μm SOI CMOS technology are fabricated, and the total ionizingdose radiation responses of the nMOSFETs having four differentdevice structures are characterized and compared for an equivalentgamma dose up to 1 Mrad (Si), using the front and back gatethreshold voltages, off-state leakage, transconductance and outputcharacteristics to assess direct current (DC) performance. Moreover,the frequency response of these devices under total ionizing doseradiation is presented, such as small-signal current gain andmaximum available/stable gain. The results indicate that all the RFPDSOI nMOSFETs show significant degradation in both DC and RFcharacteristics after radiation, in particular to the float bodynMOS. By comparison with the gate backside body contact (GBBC)structure and the body tied to source (BTS) contact structure, the low barrier body contact (LBBC) structure is more effective and excellent in the hardness of total ionizing dose radiation although there are some sacrifices in drive current, switching speed and high frequency response.-
Keywords:
- PDSOI,
- total ionizing dose radiation,
- RF
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References
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