SEMICONDUCTOR DEVICES

Influences of ICP etching damages on the electronic properties of metal field plate 4H-SiC Schottky diodes

Hui Wang1, , Yingxi Niu2, Fei Yang2, Yong Cai1, Zehong Zhang1, Zhongming Zeng1, Minrui Wang1, Chunhong Zeng1 and Baoshun Zhang1

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Abstract: Inductively coupled plasma (ICP) etching of 4H-SiC using SF6/O2 gas mixture was studied systematically and the effect of etching was examined by metal field plate SiC Schottky diodes (SBDs). It was found that the etch rate as well as SiC surface morphology were related with ICP power, RF power, pressure, the flow of SF6 and O2.Etching damages (the cone-in-pits and pits) generated at high chuck self-bias were observed, and they were thought to be caused by SiC defects. The degradation of both the reverse and forward I-V performances of SiC SBDs was ascribed to the cone-in-pits and pits. Moreover, the absolute value of forward current is even less than the reverse counterpart in the absolute value voltage range of 0-50 V for SiC SBDs with etching damages.

Key words: inductively coupled plasma etchingsilicon carbideSchottky diodescurrent-voltage characterization



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Fig. 1.  The schematic cross-sectional diagram of metal field plate SiC Schottky diodes.

Fig. 2.  SEM morphology of SiC surface etched under different conditions. (a) No. 1. (b) No. 2. (c) No. 3. (d) No. 4. (e) No. 6. (f) No. 7. (g) No. 9. (h) No. 10. The uppermost cross-shaped area was the Ni mask.

Fig. 3.  (a) Surface profile of damage etched SiC surface. (b) SEM morphology of the cone-in-pit and pit. EDS results of (c) the cone area and (d) the pit area. Optical microscope morphology of SiC surface etched for (e) 5 min and (f) 5 + 5 min,the circle diameter is 0.2 mm.

Fig. 4.  SiC surface profile (the interface of Schottky contact) of SiC SBDs (a) without and (b) with etching damages. The (c) reverse and (d) forward $I$-$V$ curves of SBDs with un-etched,few damage etched and damage etched SiC surface,respectively. (e) Forward and reverse $I$-$V$ curves of the SBD with damage etched SiC surface.

Table 1.   ICP etching conditions and rates of SiC.

No.$P_{\rm ICP}$ (W)$P_{\rm RF}$ (W)$P$ (Pa)$F_{\rm SF_6}$ (sccm)$F_{\rm O_2}$ (sccm)Bias (V)$R_{\rm e}$ (nm/min)
17501000.671207.5656312
2 10001000.671207.5524458
312501000.671207.5360480
415001000.671207.5295427
510001500.671207.5724650
612501500.671207.5402740
712502500.671207.5804861
812501000.678020325410
912502500.678020800843
1012502500.488020690820
1112502501.008020881862
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    Received: 16 March 2015 Revised: Online: Published: 01 October 2015

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      Hui Wang, Yingxi Niu, Fei Yang, Yong Cai, Zehong Zhang, Zhongming Zeng, Minrui Wang, Chunhong Zeng, Baoshun Zhang. Influences of ICP etching damages on the electronic properties of metal field plate 4H-SiC Schottky diodes[J]. Journal of Semiconductors, 2015, 36(10): 104006. doi: 10.1088/1674-4926/36/10/104006 H Wang, Y X Niu, F Yang, Y Cai, Z H Zhang, Z M Zeng, M R Wang, C H Zeng, B S Zhang. Influences of ICP etching damages on the electronic properties of metal field plate 4H-SiC Schottky diodes[J]. J. Semicond., 2015, 36(10): 104006. doi: 10.1088/1674-4926/36/10/104006.Export: BibTex EndNote
      Citation:
      Hui Wang, Yingxi Niu, Fei Yang, Yong Cai, Zehong Zhang, Zhongming Zeng, Minrui Wang, Chunhong Zeng, Baoshun Zhang. Influences of ICP etching damages on the electronic properties of metal field plate 4H-SiC Schottky diodes[J]. Journal of Semiconductors, 2015, 36(10): 104006. doi: 10.1088/1674-4926/36/10/104006

      H Wang, Y X Niu, F Yang, Y Cai, Z H Zhang, Z M Zeng, M R Wang, C H Zeng, B S Zhang. Influences of ICP etching damages on the electronic properties of metal field plate 4H-SiC Schottky diodes[J]. J. Semicond., 2015, 36(10): 104006. doi: 10.1088/1674-4926/36/10/104006.
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      Influences of ICP etching damages on the electronic properties of metal field plate 4H-SiC Schottky diodes

      doi: 10.1088/1674-4926/36/10/104006
      Funds:

      Project supported by the Suzhou Research Fund (No.BY2011129) and the State Grid Corporation of China Research Fund (No.525500140003).

      • Received Date: 2015-03-16
      • Accepted Date: 2015-05-07
      • Published Date: 2015-01-25

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