| Citation: |
Kang Yuzhu, Li Jianjun, Ding Liang, Yang Zhen, Han Jun, Deng Jun, Zou Deshu, Shen Guangdi. Epitaxyand Characteristics of Resonant Cavity LEDs at 650 nm[J]. Journal of Semiconductors, 2009, 30(5): 054005. doi: 10.1088/1674-4926/30/5/054005
Kang Y Z, Li J J, Ding L, Yang Z, Han J, Deng J, Zou D S, Shen G D. Epitaxyand Characteristics of Resonant Cavity LEDs at 650 nm[J]. J. Semicond., 2009, 30(5): 054005. doi: 10.1088/1674-4926/30/5/054005.
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Epitaxyand Characteristics of Resonant Cavity LEDs at 650 nm
doi: 10.1088/1674-4926/30/5/054005
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Abstract
Resonant-cavity light-emitting diodes (RCLED) at 650 nm wavelength were grown by metal organic chemical vapor deposition. In order to improve the interface quality and reduce the device voltage, an AlGaInP material system has been chosen to grow the top DBRs. The emission properties of the RCLED were characterized by measuring PL and EL spectra. The average emission power of the device is 0.5 mW at 20 mA and 2.2 V, and its spectrum full width at half maximum is about 10 nm.-
Keywords:
- RCLED
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