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Bound Polaron in Wurtzite Nitrides Semiconductor and Pressure Effect

Xue Yaguang, Yan Zuwei and Huangfu Yanfang

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Abstract: A variational approach is used to study the polaron effect from both the abnormal optical LO-like and TO-like phonons on the binding energies of impurity states in wurtzite nitrides semiconductor crystals by considering the uniaxial anisotropy.Taking the variations of electronic effective mass,material dielectric constants and crystal lattice vibrational frequencies with hydrostatic pressure into account,the pressure effect on the binding energy of bound polaron is discussed.The numerical results show that the polaron effect obviously decreases the binding energy,and the contributions from impurity-LO-like phonon interaction to the polaron effect are dominant.It is also found that pressure enhances the binding energy and its anisotropy.

Key words: binding energypolaronnitrides semiconductors

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    Received: 18 August 2015 Revised: 09 April 2008 Online: Published: 01 August 2008

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      Xue Yaguang, Yan Zuwei, Huangfu Yanfang. Bound Polaron in Wurtzite Nitrides Semiconductor and Pressure Effect[J]. Journal of Semiconductors, 2008, In Press. Xue Y G, Yan Z W, Huang F Y F. Bound Polaron in Wurtzite Nitrides Semiconductor and Pressure Effect[J]. J. Semicond., 2008, 29(8): 1535.Export: BibTex EndNote
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      Xue Yaguang, Yan Zuwei, Huangfu Yanfang. Bound Polaron in Wurtzite Nitrides Semiconductor and Pressure Effect[J]. Journal of Semiconductors, 2008, In Press.

      Xue Y G, Yan Z W, Huang F Y F. Bound Polaron in Wurtzite Nitrides Semiconductor and Pressure Effect[J]. J. Semicond., 2008, 29(8): 1535.
      Export: BibTex EndNote

      Bound Polaron in Wurtzite Nitrides Semiconductor and Pressure Effect

      • Received Date: 2015-08-18
      • Accepted Date: 2008-01-03
      • Revised Date: 2008-04-09
      • Published Date: 2008-08-02

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