| Citation: |
Feng Zhihong, Xie Shengyin, Zhou Rui, Yin Jiayun, Zhou Wei, Cai Shujun. A high-performance enhancement-mode AlGaN/GaN HEMT[J]. Journal of Semiconductors, 2010, 31(8): 084001. doi: 10.1088/1674-4926/31/8/084001
Feng Z H, Xie S Y, Zhou R, Yin J Y, Zhou W, Cai S J. A high-performance enhancement-mode AlGaN/GaN HEMT[J]. J. Semicond., 2010, 31(8): 084001. doi: 10.1088/1674-4926/31/8/084001.
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A high-performance enhancement-mode AlGaN/GaN HEMT
doi: 10.1088/1674-4926/31/8/084001
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Abstract
An enhancement-mode AlGaN/GaN HEMT with a threshold voltage of 0.35 V was fabricated by fluorine plasma treatment. The enhancement-mode device demonstrates high-performance DC characteristics with a saturation current density of 667 mA/mm at a gate bias of 4 V and a peak transconductance of 201 mS/mm at a gate bias of 0.8 V. The current-gain cut-off frequency and the maximum oscillation frequency of the enhancement-mode device with a gate length of 1 μ m are 10.3 GHz and 12.5 GHz, respectively, which is comparable with the depletion-mode device. A numerical simulation supported by SIMS results was employed to give a reasonable explanation that the fluorine ions act as an acceptor trap center in the barrier layer.-
Keywords:
- enhancement-mode,
- AlGaN/GaN HEMT,
- fluorine plasma,
- threshold voltage
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References
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Proportional views
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