SEMICONDUCTOR DEVICES

Predictions for proton and heavy ions induced SEUs in 65 nm SRAMs

Shougang Du1, 2, , Suge Yue2, 3, Hongxia Liu1, Long Fan2 and Hongcao Zheng2

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 Corresponding author: Du Shougang, Email: dsg2007@126.com

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Abstract: We report on irradiation induced single event upset (SEU) by high-energy protons and heavy ions. The experiments were performed at the Paul Scherer Institute, and heavy ions at the SEE irradiating Facility on the HI-13 Tandem Accelerator in China's Institute of Atomic Energy, Beijing and the Heavy Ion Research Facility in Lanzhou in the Institute of Modern Physics, Chinese Academy of Sciences. The results of proton and heavy ions induced (SEU) in 65 nm bulk silicon CMOS SRAMS are discussed and the prediction on several typical orbits are presented.

Key words: protonheavy ionsSEU ratesBendel model65 nm SRAM



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Fig. 1.  Weibull fit for M168X heavy ions SEU cross sections as a function of LET.

Fig. 2.  Weibull fit for M328C heavy ions SEU cross sections as a function of LET.

Fig. 3.  Bendel fit for M168C proton SEU cross sections as a function of energy.

Fig. 4.  Bendel fit for M328C proton SEU cross sections as a function of energy.

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Table 1.   Device used in this work.

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Table 2.   The particles and the SEU cross section at PSI.

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Table 3.   The particles and the SEU cross section at HI-13 and HIRFL.

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Table 4.   Heavy ion and proton induced SEU cross-sections and parameters.

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Table 5.   Orbital parameters.

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Table 6.   SEU rates on several orbits.

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    Received: 11 June 2015 Revised: Online: Published: 01 November 2015

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      Shougang Du, Suge Yue, Hongxia Liu, Long Fan, Hongcao Zheng. Predictions for proton and heavy ions induced SEUs in 65 nm SRAMs[J]. Journal of Semiconductors, 2015, 36(11): 114010. doi: 10.1088/1674-4926/36/11/114010 S G Du, S G Yue, H X Liu, L Fan, H C Zheng. Predictions for proton and heavy ions induced SEUs in 65 nm SRAMs[J]. J. Semicond., 2015, 36(11): 114010. doi: 10.1088/1674-4926/36/11/114010.Export: BibTex EndNote
      Citation:
      Shougang Du, Suge Yue, Hongxia Liu, Long Fan, Hongcao Zheng. Predictions for proton and heavy ions induced SEUs in 65 nm SRAMs[J]. Journal of Semiconductors, 2015, 36(11): 114010. doi: 10.1088/1674-4926/36/11/114010

      S G Du, S G Yue, H X Liu, L Fan, H C Zheng. Predictions for proton and heavy ions induced SEUs in 65 nm SRAMs[J]. J. Semicond., 2015, 36(11): 114010. doi: 10.1088/1674-4926/36/11/114010.
      Export: BibTex EndNote

      Predictions for proton and heavy ions induced SEUs in 65 nm SRAMs

      doi: 10.1088/1674-4926/36/11/114010
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      • Corresponding author: Du Shougang, Email: dsg2007@126.com
      • Received Date: 2015-06-11
      • Accepted Date: 2015-07-23
      • Published Date: 2015-01-25

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