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Two Kinds of Patterned SiGe Epitaxial Growth Technologies

Xu Yang, Wang Fei, Xu Jun, Liu Zhihong and Qian Peixin

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Abstract: We lucubrate on the patterned SiGe epitaxial growth technology based on Tsinghua’s UHV/CVD system.We develop different applied technologies of the patterned SiGe epitaxial growth by using the SiO2 single-film or SiO2/Poly-Si double-film as the patterned-window isolated layer.

Key words: patterned epitaxial growthSiGeUHV/CVD

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    Received: 20 August 2015 Revised: Online: Published: 01 December 2006

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      Xu Yang, Wang Fei, Xu Jun, Liu Zhihong, Qian Peixin. Two Kinds of Patterned SiGe Epitaxial Growth Technologies[J]. Journal of Semiconductors, 2006, In Press. Xu Y, Wang F, Xu J, Liu Z H, Qian P X. Two Kinds of Patterned SiGe Epitaxial Growth Technologies[J]. Chin. J. Semicond., 2006, 27(13): 389.Export: BibTex EndNote
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      Xu Yang, Wang Fei, Xu Jun, Liu Zhihong, Qian Peixin. Two Kinds of Patterned SiGe Epitaxial Growth Technologies[J]. Journal of Semiconductors, 2006, In Press.

      Xu Y, Wang F, Xu J, Liu Z H, Qian P X. Two Kinds of Patterned SiGe Epitaxial Growth Technologies[J]. Chin. J. Semicond., 2006, 27(13): 389.
      Export: BibTex EndNote

      Two Kinds of Patterned SiGe Epitaxial Growth Technologies

      • Received Date: 2015-08-20

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