| Citation: |
Eerdunchaolu. Temperature Dependence of the Energies of Quasi-Two-Dimensional Strong-Coupling Excitons[J]. Journal of Semiconductors, 2008, In Press.
E E D C L. Temperature Dependence of the Energies of Quasi-Two-Dimensional Strong-Coupling Excitons[J]. J. Semicond., 2008, 29(7): 1318.
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Temperature Dependence of the Energies of Quasi-Two-Dimensional Strong-Coupling Excitons
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Abstract
The influences of lattice vibration and polaron effects on the ground state and the excited state of the system,for which the exciton is strongly coupled with interface-optical (IO) phonons but weakly or intermediately coupled with bulk-longitudinal-optical (LO) phonons in a quantum well,are studied using the linear-combination operator and the LLP variational method.The expressions for the ground state energy shift and the first internal excited state energy shift of the exciton as a function of the well width and temperature are derived.Numerical calculations for an AgCl/AgBr/AgCl QW,for example,are performed.The results indicate that the ground state energy shift and the first internal excited state energy shift increases with the temperature for strong exciton-IO-phonon coupling but decreases with the temperature for weak exciton-LO-phonon coupling. -
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