SEMICONDUCTOR DEVICES

Performance prediction of four-contact vertical Hall-devices using a conformal mapping technique

Yang Huang1, Yue Xu1, 2, and Yufeng Guo1, 2

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 Corresponding author: Xu Yue,Email:yuex@njupt.edu.cn

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Abstract: Instead of the conventional design with five contacts in the sensor active area, innovative vertical Hall devices(VHDs) with four contacts and six contacts are asymmetrical in structural design but symmetrical in the current flow that can be well fit for the spinning current technique for offset elimination. In this article, a conformal mapping calculation method is used to predict the performance of asymmetrical VHD embedded in a deep n-well with four contacts. Furthermore, to make the calculation more accurate, the junction field effect is also involved into the conformal mapping method. The error between calculated and simulated results is less than 5% for the current-related sensitivity, and approximately 13% for the voltage-related sensitivity. This proves that such calculations can be used to predict the optimal structure of the vertical Hall-devices.

Key words: conformal mapping techniquevertical Hall devicegeometry factormagnetic sensitivity



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Fig1.  Schematic section view of the vertical Hall-device with four contacts embedded in a well located in the t-plane.

Fig2.  Schematic view of the vertical Hall-device with four contacts located in the half $w$-plane.

Fig3.  Schematic view of the resulting skewed Hall device after conformal mapping.

Fig4.  Two-dimensional structure of the vertical Hall device with four electrical contacts used for simulation and calculation.

Fig5.  (Color online)Two-dimensional structure of the vertical Hall device with four electrical contacts simulated by TCAD.

Fig6.  Geometrical factors as a function of the Hall angle for well depth $h$ $=$ 2 $\mu$m,4 $\mu$m,and infinity.

Fig7.  Comparison of current-related sensitivity $S_{\rm I}$ by conformal mapping calculation and TCAD simulation for both Gaussian and uniform doping profile as a function of the bias current $I_{\rm bias}$.

Fig8.  Comparison of voltage-related sensitivity $S_{\rm V}$ by conformal mapping calculation and TCAD simulation for both Gaussian and uniform doping profiles as a function of the bias voltage $V_{\rm bias}$.

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    Received: 16 April 2015 Revised: Online: Published: 01 December 2015

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      Yang Huang, Yue Xu, Yufeng Guo. Performance prediction of four-contact vertical Hall-devices using a conformal mapping technique[J]. Journal of Semiconductors, 2015, 36(12): 124006. doi: 10.1088/1674-4926/36/12/124006 Y Huang, Y Xu, Y F Guo. Performance prediction of four-contact vertical Hall-devices using a conformal mapping technique[J]. J. Semicond., 2015, 36(12): 124006. doi: 10.1088/1674-4926/36/12/124006.Export: BibTex EndNote
      Citation:
      Yang Huang, Yue Xu, Yufeng Guo. Performance prediction of four-contact vertical Hall-devices using a conformal mapping technique[J]. Journal of Semiconductors, 2015, 36(12): 124006. doi: 10.1088/1674-4926/36/12/124006

      Y Huang, Y Xu, Y F Guo. Performance prediction of four-contact vertical Hall-devices using a conformal mapping technique[J]. J. Semicond., 2015, 36(12): 124006. doi: 10.1088/1674-4926/36/12/124006.
      Export: BibTex EndNote

      Performance prediction of four-contact vertical Hall-devices using a conformal mapping technique

      doi: 10.1088/1674-4926/36/12/124006
      Funds:

      Project supported by the Natural Science Foundation of Jiangsu Province, China(Nos. BK20131379, BK20141431) and the Graduate Research and Innovation Projects of Jiangsu Province(No. SJLX_0373).

      More Information
      • Corresponding author: Xu Yue,Email:yuex@njupt.edu.cn
      • Received Date: 2015-04-16
      • Accepted Date: 2015-06-17
      • Published Date: 2015-01-25

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