AlxGa1-xAs/GaAs DDRIMPATTs"/>
J. Semicond. > 2016, Volume 37 > Issue 6 > 064002, doi: 10.1088/1674-4926/37/6/064002
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SEMICONDUCTOR DEVICES

Large signal and noise properties of heterojunction AlxGa1-xAs/GaAs DDRIMPATTs

Suranjana Banerjee and Monojit Mitra

+ Author Affiliations

 Corresponding author: Suranjana Banerjee, Email: suranjanarpe21@yahoo.com

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Abstract: Simulation studies are carried out on the large signal and noise properties of heterojunction (HT) AlxGa1-xAs/GaAs double drift region (DDR) IMPATT devices at V-band (60 GHz). The dependence of Al mole fraction on the aforementioned properties of the device has been investigated. A full simulation software package has been indigenously developed for this purpose. The large signal simulation is based on a non-sinusoidal voltage excitation model. Three mole fractions of Al and two complementary HT DDR structures for each mole fraction i.e., six DDR structures are considered in this study. The purpose is to discover the most suitable structure and corresponding mole fraction at which high power, high efficiency and low noise are obtained from the device. The noise spectral density and noise measure of all six HT DDR structures are obtained from a noise model and simulation method. Similar studies are carried out on homojunction (HM) DDR GaAs IMPATTs at 60 GHz to compare their RF properties with those of HT DDR devices. The results show that the HT DDR device based on N-AlxGa1-xAs/p-GaAs with 30% mole fraction of Al is the best one so far as large signal power output, DC to RF conversion efficiency and noise level are concerned.

Key words: heterojunction, AlxGa1-xAs/GaAs, mole fraction, DDR, IMPATTS



[1]
Adlerstein M G, Wallace R N, Steele S R. Millimeter wave GaAs read IMPATT diodes. IEEE Trans Electron Devices, 1978, 25:1151
[2]
Zhang X, Freyer J. Single drift GaAs IMPATT diodes for millimeter wave frequencies. Electron Lett, 1984, 20:359
[3]
Eisle H. GaAs W-band IMPATT diodes for very low noise oscillations. Electron Lett, 1990, 16:109
[4]
Adlerstein M G, Chu S L G. GaAs IMPATT diodes for 60 GHz. IEEE Electron Device Lett, 1984, 5:97
[5]
Acharyya A, Mallik A, Banerjee D, et al. Large-signal characterizations of DDR IMPATT devices based on group Ⅲ-Ⅴ semiconductors at millimeterwave and terahertz frequencies. Journal of Semiconductors, 2014, 35(8):084003
[6]
Mishra J K, Panda A K, Dash G N. An extremely low-noise heterojunction IMPATT. IEEE Trans Electron Devices, 1997, 44:2143
[7]
Suranjana B, Monojit M. Heterojunction DDR THz IMPATT diodes based on AlxGa1-xN/GaN material system. Journal of Semiconductors, 2015, 36(6):064002
[8]
Mukherjee M, Tripathy P R, Pati S P. Si/SiC-based DD hetero-structure IMPATTs as MM-wave power-source:a generalized large-signal analysis. Journal of Semiconductors, 2015, 36(6):064005
[9]
Acharyya A, Banerjee S, Banerjee J P. Large-signal simulation of 94 GHz pulsed DDR silicon IMPATTs including the temperature transient effect. Radio Engineering, 2012, 21:1218
[10]
Sze S M, Ryder R M. Microwave avalanche diodes. Proceedings of IEEE Special Issue on Microwave Semiconductor Devices, 1971, 59:1140
[11]
Acharyya A, Mukherjee J, Mukherjee M, et al. Heat sink design for IMPATT diode sources with different base materials operating at 94 GHz. Archives of Physics Research, 2011, 2:107
[12]
Roy S K, Sridharan M, Ghosh R, et al. Computer method for the dc field and carrier current profiles in the IMPATT device starting from the field extremum in the depletion layer. Proc of the 1st Conference on Numerical Analysis of Semiconductor Devices (NASECODE I), Dublin, Ireland, 1979:266
[13]
Electronic archive:New semiconductor materials, characteristics and properties, 2013, http://www.ioffe.ru/SVA/NSM/Semicond
[14]
Pati S P, Banerjee J P, Roy S K. The distribution of negative resistivity in the active layer of millimeter-wave double-drift region diodes. J Phys D:Appl Phys, 1989, 22:959
[15]
Gummel H K, Blue J L. A small-signal theory of avalanche noise in IMPATT diodes. IEEE Trans Electron Devices, 1967, 14:569
Fig. 1.  1-D model of DDR IMPATT diodes. (a) n-GaAs-p-GaAs. (b) N-AlxGa1-xAs-p-GaAs. (c) n-GaAs-P-AlxGa1-xAs.

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Fig. 2.  Voltage driven IMPATT diode and its current response.

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Fig. 3.  (Color online) Large-signal admittance characteristics of HM and HT DDR IMPATTs at 2.20 × 108 A/m2 bias current density and 50% voltage modulation.

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Fig. 4.  (Color online) (a) RF power output and (b) DC to RF conversion efficiency versus RF voltage at 2.20 × 108A/m2 bias current density of HM and HT DDR IMPATTs based on AlxGa1-xAs/GaAs.

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Fig. 5.  (Color online) (a) RF power output and (b) DC to RF conversion efficiency versus Al mole fraction of two complementary HT DDR IMPATTs at a bias current density of 2.20 × 108A/m2.

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Fig. 6.  (Color online) Noise spectral density of HM and HT DDR IMPATTs at 2.20 × 108 A/m2 bias current density.

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Fig. 7.  (Color online) Noise measure versus frequency of 60 GHzHM and HT DDR IMPATTs at 2.20 × 108A/m2 bias current density.

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Table 1.   Structural and doping parameters.

Structure Symbols used ingraphs Wn(µ m) Wp (µ m) ND (1023 m-3) NA (1023 m-3) Nn+ (1025 m-3) Np+ (1025 m-3) Dj (µ m)
n-GaAs-p-GaAs HMDD HMDD 0.4800 0.4800 1.000 1.000 5.000 3.500 55.0
N-Al0.1Ga0.9As-p-GaAs HTDD HTDD1 0.5200 0.5000 0.850 0.900 5.000 3.500 55.0
P-Al0.1Ga0.9As-n-GaAs HTDD HTDD2 0.5500 0.5000 0.900 0.900 5.000 3.500 55.0
N-Al0.2Ga0.8As-p-GaAs HTDD HTDD3 0.5200 0.5000 0.920 0.900 5.000 3.500 55.0
P-Al0.2Ga0.8As-n-GaAs HTDD HTDD4 0.5400 0.5100 0.860 0.920 5.000 3.500 55.0
N-Al0.3Ga0.7As-p-GaAs HTDD HTDD5 0.5100 0.5000 0.900 0.950 5.000 3.500 55.0
P-Al0.3Ga0.7As-n-GaAs HTDD HTDD6 0.5200 0.5100 0.900 0.950 5.000 3.500 55.0
DownLoad: CSV

Table 2.   Static parameters of 60 GHz homojunction and heterojunction DDR IMPATTs for bias current density of J0 = 2:20 × 108 A/m2.

Structure Symbols used in graphs ξP (107V/m) VB (V) VA (V) VD/VB (%) xA (μ m) xA/W(%)
n-GaAs-p-GaAs HMDD HMDD 5.6067 27.76 18.21 34.40 0.462 48.13
N-Al0.1Ga0.9As-p-GaAs HTDD HTDD1 5.2434 28.19 16.55 41.29 0.388 38.03
P-Al0.1Ga0.9As-n-GaAs HTDD HTDD2 5.5434 30.81 19.01 38.29 0.410 39.05
N-Al0.2Ga0.8As-p-GaAs HTDD HTDD3 5.3189 29.56 16.44 44.38 0.382 37.45
P-Al0.2Ga0.8As-n-GaAs HTDD HTDD4 5.5781 30.94 18.81 39.21 0.403 38.38
N-Al0.3Ga0.7As-p-GaAs HTDD HTDD5 5.4476 30.78 16.37 46.82 0.378 37.42
P-Al0.3Ga0.7As-n-GaAs HTDD HTDD6 5.5987 31.06 18.75 39.63 0.400 38.84
DownLoad: CSV

Table 3.   Large-signal parameters of 60 GHz homojunction and heterojunction DDR IMPATTs for bias current density of J0 = 2.20 × 108 A/m2 at 50% voltage modulation.

Structure Symbols used in graphs fp (GHz) fa (GHz) Gp(107S/m2) Bp(107S/m2) Qp =-(Bp /Gp) PRF (W) Simulation PRF (W) Experiment ηL(%)
n-GaAs-p-GaAs HMDD HMDD 58.50 34.00 -0.5498 2.0722 3.77 1.26 1.25[1] 8.67
N-Al0.1Ga0.9As-p-GaAs HTDD HTDD1 61.20 34.10 -0.9415 3.5326 3.75 2.22 - 15.08
P-Al0.1Ga0.9As-n-GaAs HTDD HTDD2 59.00 31.20 -0.6798 2.4493 3.60 1.91 - 11.90
N-Al0.2Ga0.8As-p-GaAs HTDD HTDD3 60.30 33.40 -0.9956 3.5511 3.57 2.58 - 16.72
P-Al0.2Ga0.8As-n-GaAs HTDD HTDD4 60.10 32.50 -0.7523 2.4771 3.29 2.14 - 13.23
N-Al0.3Ga0.7As-p-GaAs HTDD HTDD5 60.50 33.20 -1.1461 3.5741 3.12 3.22 - 20.04
P-Al0.3Ga0.7As-n-GaAs HTDD HTDD6 59.90 31.80 -0.8972 2.5003 2.79 2.57 - 15.83
DownLoad: CSV
[1]
Adlerstein M G, Wallace R N, Steele S R. Millimeter wave GaAs read IMPATT diodes. IEEE Trans Electron Devices, 1978, 25:1151
[2]
Zhang X, Freyer J. Single drift GaAs IMPATT diodes for millimeter wave frequencies. Electron Lett, 1984, 20:359
[3]
Eisle H. GaAs W-band IMPATT diodes for very low noise oscillations. Electron Lett, 1990, 16:109
[4]
Adlerstein M G, Chu S L G. GaAs IMPATT diodes for 60 GHz. IEEE Electron Device Lett, 1984, 5:97
[5]
Acharyya A, Mallik A, Banerjee D, et al. Large-signal characterizations of DDR IMPATT devices based on group Ⅲ-Ⅴ semiconductors at millimeterwave and terahertz frequencies. Journal of Semiconductors, 2014, 35(8):084003
[6]
Mishra J K, Panda A K, Dash G N. An extremely low-noise heterojunction IMPATT. IEEE Trans Electron Devices, 1997, 44:2143
[7]
Suranjana B, Monojit M. Heterojunction DDR THz IMPATT diodes based on AlxGa1-xN/GaN material system. Journal of Semiconductors, 2015, 36(6):064002
[8]
Mukherjee M, Tripathy P R, Pati S P. Si/SiC-based DD hetero-structure IMPATTs as MM-wave power-source:a generalized large-signal analysis. Journal of Semiconductors, 2015, 36(6):064005
[9]
Acharyya A, Banerjee S, Banerjee J P. Large-signal simulation of 94 GHz pulsed DDR silicon IMPATTs including the temperature transient effect. Radio Engineering, 2012, 21:1218
[10]
Sze S M, Ryder R M. Microwave avalanche diodes. Proceedings of IEEE Special Issue on Microwave Semiconductor Devices, 1971, 59:1140
[11]
Acharyya A, Mukherjee J, Mukherjee M, et al. Heat sink design for IMPATT diode sources with different base materials operating at 94 GHz. Archives of Physics Research, 2011, 2:107
[12]
Roy S K, Sridharan M, Ghosh R, et al. Computer method for the dc field and carrier current profiles in the IMPATT device starting from the field extremum in the depletion layer. Proc of the 1st Conference on Numerical Analysis of Semiconductor Devices (NASECODE I), Dublin, Ireland, 1979:266
[13]
Electronic archive:New semiconductor materials, characteristics and properties, 2013, http://www.ioffe.ru/SVA/NSM/Semicond
[14]
Pati S P, Banerjee J P, Roy S K. The distribution of negative resistivity in the active layer of millimeter-wave double-drift region diodes. J Phys D:Appl Phys, 1989, 22:959
[15]
Gummel H K, Blue J L. A small-signal theory of avalanche noise in IMPATT diodes. IEEE Trans Electron Devices, 1967, 14:569

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    Received: 30 July 2015 Revised: 07 December 2015 Online: Published: 01 June 2016

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      Article Navigation >  Journal of Semiconductors  > 2016  >  37(6): 064002
      Suranjana Banerjee, Monojit Mitra. Large signal and noise properties of heterojunction AlxGa1-xAs/GaAs DDRIMPATTs[J]. Journal of Semiconductors, 2016, 37(6): 064002. doi: 10.1088/1674-4926/37/6/064002 S Banerjee, M Mitra. Large signal and noise properties of heterojunction AlxGa1-xAs/GaAs DDRIMPATTs[J]. J. Semicond., 2016, 37(6): 064002. doi:  10.1088/1674-4926/37/6/064002.Export: BibTex EndNote
      Citation:
      Suranjana Banerjee, Monojit Mitra. Large signal and noise properties of heterojunction AlxGa1-xAs/GaAs DDRIMPATTs[J]. Journal of Semiconductors, 2016, 37(6): 064002. doi: 10.1088/1674-4926/37/6/064002

      S Banerjee, M Mitra. Large signal and noise properties of heterojunction AlxGa1-xAs/GaAs DDRIMPATTs[J]. J. Semicond., 2016, 37(6): 064002. doi:  10.1088/1674-4926/37/6/064002.
      Export: BibTex EndNote
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      Large signal and noise properties of heterojunction AlxGa1-xAs/GaAs DDRIMPATTs

      doi: 10.1088/1674-4926/37/6/064002

      • Indian Institute of Engineering Science and Technology, Shibpur, WB 711113, India

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      • Corresponding author: Email: suranjanarpe21@yahoo.com
      • Received Date: 2015-07-30
      • Revised Date: 2015-12-07
      • Published Date: 2016-06-01

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