CMP and Electrochemical Characterization of Ge2Sb2Te5 Filmin Polishing Slurry

Liu Qibin; Zhang Kailiang; Wang Liangyong; Song Zhitang; Feng Songlin

Research Center of Functional Semiconductor Film Engineering & Technology,Laboratory of Nanotechnology,Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences, Shanghai 200050,China
Graduate University of Chinese Academy o
Research Center of Functional Semiconductor Film Engineering & Technology,Laboratory of Nanotechnology,Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences, Shanghai 200050,China
Research Center of Functional Semiconductor Film Engineering & Technology,Laboratory of Nanotechnology,Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences, Shanghai 200050,China
Research Center of Functional Semiconductor Film Engineering & Technology,Laboratory of Nanotechnology,Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences, Shanghai 200050,China
Research Center of Functional Semiconductor Film Engineering & Technology,Laboratory of Nanotechnology,Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences, Shanghai 200050,China

Article Navigation > Journal of Semiconductors > 2006 > 27(S1): 161-164

Liu Qibin, Zhang Kailiang, Wang Liangyong, Song Zhitang, Feng Songlin. CMP and Electrochemical Characterization of Ge2Sb2Te5 Filmin Polishing Slurry[J]. Journal of Semiconductors, 2006, In Press. Liu Q B, Zhang K L, Wang L Y, Song Z T, Feng S L. CMP and Electrochemical Characterization of Ge2Sb2Te5 Filmin Polishing Slurry[J]. Chin. J. Semicond., 2006, 27(13): 161.Export: BibTex EndNote

Citation:

Liu Qibin, Zhang Kailiang, Wang Liangyong, Song Zhitang, Feng Songlin. CMP and Electrochemical Characterization of Ge2Sb2Te5 Filmin Polishing Slurry[J]. Journal of Semiconductors, 2006, In Press.

Liu Q B, Zhang K L, Wang L Y, Song Z T, Feng S L. CMP and Electrochemical Characterization of Ge2Sb2Te5 Filmin Polishing Slurry[J]. Chin. J. Semicond., 2006, 27(13): 161.

Export: BibTex EndNote

Citation:

Liu Qibin, Zhang Kailiang, Wang Liangyong, Song Zhitang, Feng Songlin. CMP and Electrochemical Characterization of Ge2Sb2Te5 Filmin Polishing Slurry[J]. Journal of Semiconductors, 2006, In Press.

Liu Q B, Zhang K L, Wang L Y, Song Z T, Feng S L. CMP and Electrochemical Characterization of Ge2Sb2Te5 Filmin Polishing Slurry[J]. Chin. J. Semicond., 2006, 27(13): 161.

Export: BibTex EndNote

PDF( 0 KB)

CMP and Electrochemical Characterization of Ge2Sb2Te5 Filmin Polishing Slurry

Research Center of Functional Semiconductor Film Engineering & Technology,Laboratory of Nanotechnology,Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences, Shanghai 200050,China
Graduate University of Chinese Academy o
Research Center of Functional Semiconductor Film Engineering & Technology,Laboratory of Nanotechnology,Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences, Shanghai 200050,China
Research Center of Functional Semiconductor Film Engineering & Technology,Laboratory of Nanotechnology,Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences, Shanghai 200050,China
Research Center of Functional Semiconductor Film Engineering & Technology,Laboratory of Nanotechnology,Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences, Shanghai 200050,China
Research Center of Functional Semiconductor Film Engineering & Technology,Laboratory of Nanotechnology,Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences, Shanghai 200050,China

Received Date: 2015-08-20

Abstract

Abstract

Electrochemical behavior of Ge2Sb2Te5 films has been investigated in CMP slurry at different pH value and H2O2 concentration.Electrochemical measurements were performed with Solartron SI1287,including open circuit potential(OCP),potentiodynamic polarization sweep.OCP results indicate that Ge2Sb2Te5 alloy films show a passive behavior when pH value is 10,present a passive-active transition when pH value is 11,and present a active behavior when pH value is 12.For potentiodynamic polarization sweep measurements,the shape of the curves changes little with different pH value and H2O2 concentration,suggesting that the reactions at the alloy-slurry interface are the same.CMP of Ge2Sb2Te5 films was investigated using self-made slurry,and polished surface of wafer with GST film is analyzed by SEM and EDS.Results show that the fill structure of GST for phase change memory is formed by CMP process.
- Ge2Sb2Te5,
- phase change memory,
- CMP,
- electrochemistry

FullText(HTML)

References(0)

References

CMP and Electrochemical Characterization of Ge2Sb2Te5 Filmin Polishing Slurry

Search

Share:

Article Metrics

History

Catalog

Email This Article

CMP and Electrochemical Characterization of Ge2Sb2Te5 Filmin Polishing Slurry

Abstract

References

Proportional views

Catalog

CMP and Electrochemical Characterization of Ge2Sb2Te5 Filmin Polishing Slurry

Search

Share:

Article Metrics

History

Catalog

Email This Article

CMP and Electrochemical Characterization of Ge2Sb2Te5 Filmin Polishing Slurry

Abstract

References

Proportional views

Catalog

Export File

Citation

Format

Content