Chin. J. Semicond. > 2003, Volume 24 > Issue 2 > 127-132

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直接隧穿应力下超薄栅氧化层中的多缺陷产生行为(英文)

霍宗亮 , 毛凌锋 , 谭长华 and 许铭真

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Key words: 缺陷, MOS结构, 时变击穿

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    History

    Received: 20 August 2015 Revised: Online: Published: 01 February 2003

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      • Received Date: 2015-08-20

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