| Citation: |
Wang Lei, Sun Guosheng, Gao Xin, Zhao Wanshun, Zhang Yongxing, Zeng Yiping, Li Jinmin. LPCVD Homoepitaxial Growth on Off-Axis Si-Face 4H-SiC(0001) Substrates[J]. Journal of Semiconductors, 2005, In Press.
Wang L, Sun G S, Gao X, Zhao W S, Zhang Y X, Zeng Y P, Li J M. LPCVD Homoepitaxial Growth on Off-Axis Si-Face 4H-SiC(0001) Substrates[J]. Chin. J. Semicond., 2005, 26(13): 113.
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LPCVD Homoepitaxial Growth on Off-Axis Si-Face 4H-SiC(0001) Substrates
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Abstract
Chemical vapor deposition (CVD) is the primary technique for the growth of SiC materials used to fabricate microelectronic devices.In order to obtain high quality 4H-SiC epilayers,homoepitaxial growth is performed on 8° off-axis toward 〈1120〉 4H-SiC(0001) Si-faced substrates,utilizing an idea of step-controlled epitaxial growth.Since surface morphology is an important parameter determining material quality,the relation between surface morphology and growth parameters,as well as the reasons of defect formation,is explored.Polytypies of nonuniform SiC epilayers is investigated using Raman scattering. -
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