SEMICONDUCTOR PHYSICS

Effect of annealing on characteristics of a HfOxNy–HfO2–HfOxNy sandwich stack compared with HfO2 film

Zhang Yan and Jiang Ran

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Abstract: HfOxNy–HfO2–HfOxNy sandwich-stack (SS) film was investigated in comparison with HfO2 film ofthe same thickness. Higher thermal stability and better surface morphology can be observed for the SS film. Thisstructure also shows stronger immunity to interfacial oxidation compared with HfO2 film. Meanwhile, unlike theHfOxNy dielectric, the capacitance performance of SS film was not worse (but was even better) than a pure HfO2 film of the same thickness. The SS structure appears to be a promising high-k gate dielectric compared with bothpure HfOxNy and HfO2 dielectrics for future ULSI devices. Additionally, PDA treatment plays an important rolein improving the characteristics of SS film, which is confirmed by effective channel electron mobility and stressinduced leakage current (SILC) investigations.

Key words: hafnium oxynitride dielectrics diffusion electrical properties permittivity

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    Received: 18 August 2015 Revised: 27 March 2009 Online: Published: 01 August 2009

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      Zhang Yan, Jiang Ran. Effect of annealing on characteristics of a HfOxNy–HfO2–HfOxNy sandwich stack compared with HfO2 film[J]. Journal of Semiconductors, 2009, 30(8): 082004. doi: 10.1088/1674-4926/30/8/082004 Zhang Y, Jiang R. Effect of annealing on characteristics of a HfOxNy–HfO2–HfOxNy sandwich stack compared with HfO2 film[J]. J. Semicond., 2009, 30(8): 082004. doi:  10.1088/1674-4926/30/8/082004.Export: BibTex EndNote
      Citation:
      Zhang Yan, Jiang Ran. Effect of annealing on characteristics of a HfOxNy–HfO2–HfOxNy sandwich stack compared with HfO2 film[J]. Journal of Semiconductors, 2009, 30(8): 082004. doi: 10.1088/1674-4926/30/8/082004

      Zhang Y, Jiang R. Effect of annealing on characteristics of a HfOxNy–HfO2–HfOxNy sandwich stack compared with HfO2 film[J]. J. Semicond., 2009, 30(8): 082004. doi:  10.1088/1674-4926/30/8/082004.
      Export: BibTex EndNote

      Effect of annealing on characteristics of a HfOxNy–HfO2–HfOxNy sandwich stack compared with HfO2 film

      doi: 10.1088/1674-4926/30/8/082004
      • Received Date: 2015-08-18
      • Accepted Date: 2009-02-17
      • Revised Date: 2009-03-27
      • Published Date: 2009-07-31

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