| Citation: |
Liu Xingfang, Sun Guosheng, Li Jinmin, Zhao Yongmei, Ning Jin, Wang Lei, Zhao Wanshun, Luo Muchang, Li Jiaye, Zeng Yiping. Effect of Mesa Structures on the Responsivities of 4H-SiC Photodetectors[J]. Journal of Semiconductors, 2007, In Press.
Liu X F, Sun G S, Li J M, Zhao Y M, Ning J, Wang L, Zhao W S, Luo M C, Li J Y, Zeng Y P. Effect of Mesa Structures on the Responsivities of 4H-SiC Photodetectors[J]. Chin. J. Semicond., 2007, 28(S1): 579.
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Effect of Mesa Structures on the Responsivities of 4H-SiC Photodetectors
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Abstract
Four types of 4H.SiC photodetectors，#1，#2，#3 and#4，with different mesa structures in the area of the opti· cal window have been fabricated and characterized by the photoresponse spectra.The vertical photodetectors were based on 4H.SiC homoepilayers.The optical window of photodetector#1 consisted of a transparent Pt layer and a P+/p/n-layer up, on the n+substate；and that of photodetector#2，#3 and #4 consisted of a P+/p/n-layer，a p/n-layer and a n-layer，respectively.The photoresponse results showed that the best ultraviolet photoresponsiVity was of the photodetector #2，with at least an order of magnitude higher than that of the other three types of photodetectors.It also showed that the wavelength of the peak value varied according to mesa structures，and the wavelengths were 341nm，312nm，305nm and 297nm for photode· tector#1，#2，#3 and #4，respectively.-
Keywords:
- 4H·SiC,
- ultraviolet photodetector,
- mesa structures
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References
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Proportional views
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