Fabrication and Simulation of NDRHBT

Li Jianheng; Zhang Shilin; Guo Weilian; Qi Haitao; Liang Huilai; Mao Luhong

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Article Navigation > Journal of Semiconductors > 2005 > 26(12): 2416-2421

Li Jianheng, Zhang Shilin, Guo Weilian, Qi Haitao, Liang Huilai, Mao Luhong. Fabrication and Simulation of NDRHBT[J]. Journal of Semiconductors, 2005, In Press. Li J H, Zhang S L, Guo W L, Qi H T, Liang H L, Mao L H. Fabrication and Simulation of NDRHBT[J]. Chin. J. Semicond., 2005, 26(12): 2416.Export: BibTex EndNote

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Li Jianheng, Zhang Shilin, Guo Weilian, Qi Haitao, Liang Huilai, Mao Luhong. Fabrication and Simulation of NDRHBT[J]. Journal of Semiconductors, 2005, In Press.

Li J H, Zhang S L, Guo W L, Qi H T, Liang H L, Mao L H. Fabrication and Simulation of NDRHBT[J]. Chin. J. Semicond., 2005, 26(12): 2416.

Export: BibTex EndNote

Citation:

Li Jianheng, Zhang Shilin, Guo Weilian, Qi Haitao, Liang Huilai, Mao Luhong. Fabrication and Simulation of NDRHBT[J]. Journal of Semiconductors, 2005, In Press.

Li J H, Zhang S L, Guo W L, Qi H T, Liang H L, Mao L H. Fabrication and Simulation of NDRHBT[J]. Chin. J. Semicond., 2005, 26(12): 2416.

Export: BibTex EndNote

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Fabrication and Simulation of NDRHBT

School of Electronic Information Engineering,Tianjin University,Tianjin 300072,China
School of Electronic Information Engineering,Tianjin University,Tianjin 300072,China
School of Electronic Information Engineering,Tianjin University,Tianjin 300072,China
School of Electronic Information Engineering,Tianjin University,Tianjin 300072,China
School of Electronic Information Engineering,Tianjin University,Tianjin 300072,China
School of Electronic Information Engineering,Tianjin University,Tianjin 300072,China

Received Date: 2015-08-19

Abstract

Abstract

A thin base (8nm) InGaP/GaAs dual heterojunction material is grown by MBE and a heterojunction bipolar transistor (HBT) with negative differential resistance (NDR) is fabricated.The NDR is observed at constant voltage and current.A physical analysis of this device is presented.The physical I_C-V_CE formulas are derived and the relation between the NDR and the structure and parameters of this device is discussed.The circuit net list model is compiled by PSPICE including the I_C-V_CE formulas and the simulated result is close to the measured outcome.
- heterojunction bipolar transistor,
- negative differential resistance,
- thin base,
- circuit simulation

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