SEMICONDUCTOR TECHNOLOGY

Numerical analysis of the non-equilibrium plasma flow in the gaseous electronics conference reference reactor

Bijie Yang1, Ning Zhou2 and Quanhua Sun1,

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 Corresponding author: Sun Quanhua,Email:qsun@imech.ac.cn

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Abstract: The capacitively coupled plasma in the gaseous electronics conference reference reactor is numerically investigated for argon flow using a non-equilibrium plasma fluid model. The finite rate chemistry is adopted for the chemical non-equilibrium among species including neutral metastable, whereas a two-temperature model is employed to resolve the thermal non-equilibrium between electrons and heavy species. The predicted plasma density agrees very well with experimental data for the validation case. A strong thermal non-equilibrium is observed between heavy particles and electrons due to its low collision frequency, where the heavy species remains near ambient temperature for low pressure and low voltage conditions (0.1 Torr, 100 V). The effects of the operating parameters on the ion flux are also investigated, including the electrode voltage, chamber pressure, and gas flow rate. It is found that the ion flux can be increased by either elevating the electrode voltage or lowering the gas pressure.

Key words: capacitively coupled plasmanon-equilibrium flowargon discharge



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Fig. 1.  Sketch of the GEC-CCP reactor.

Fig. 2.  (Color online) Streamlines and temperature contours of heavy particles.

Fig. 3.  (Color online) Electron temperature distribution.

Fig. 4.  (Color online) Electron density distribution.

Fig. 5.  (Color online) Electron density distribution along the axial line (a) and the radial line at axial position $=$ 0 mm (b).

Fig. 6.  Effects of electrode voltage on the ion flux (gas pressure: 0.1~Torr, flow rate: 100 sccm).

Fig. 7.  Effects of electrode voltage on Ar$^{+}$ density and velocity (gas pressure: 0.1 Torr; flow rate: 100 sccm).

Fig. 8.  Effects of gas pressure on the ion flux (peak voltage: 100 V, flow rate: 100 sccm).

Table 1.   Chemical reaction processes of argon discharge.

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Table 2.   Effects of electrode voltage on the ion flux (gas pressure: 0.1 Torr, flow rate: 100 sccm).

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Table 3.   Effects of gas pressure on the ion flux (peak voltage: 100 V, flow rate: 100 sccm).

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    Received: 14 February 2015 Revised: Online: Published: 01 January 2016

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      Bijie Yang, Ning Zhou, Quanhua Sun. Numerical analysis of the non-equilibrium plasma flow in the gaseous electronics conference reference reactor[J]. Journal of Semiconductors, 2016, 37(1): 016001. doi: 10.1088/1674-4926/37/1/016001 B J Yang, N Zhou, Q H Sun. Numerical analysis of the non-equilibrium plasma flow in the gaseous electronics conference reference reactor[J]. J. Semicond., 2016, 37(1): 016001. doi: 10.1088/1674-4926/37/1/016001.Export: BibTex EndNote
      Citation:
      Bijie Yang, Ning Zhou, Quanhua Sun. Numerical analysis of the non-equilibrium plasma flow in the gaseous electronics conference reference reactor[J]. Journal of Semiconductors, 2016, 37(1): 016001. doi: 10.1088/1674-4926/37/1/016001

      B J Yang, N Zhou, Q H Sun. Numerical analysis of the non-equilibrium plasma flow in the gaseous electronics conference reference reactor[J]. J. Semicond., 2016, 37(1): 016001. doi: 10.1088/1674-4926/37/1/016001.
      Export: BibTex EndNote

      Numerical analysis of the non-equilibrium plasma flow in the gaseous electronics conference reference reactor

      doi: 10.1088/1674-4926/37/1/016001
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      Project supported by the National Natural Science Foundation of China (Nos. 11372325, 11475239).

      More Information
      • Corresponding author: Sun Quanhua,Email:qsun@imech.ac.cn
      • Received Date: 2015-02-14
      • Accepted Date: 2015-07-03
      • Published Date: 2016-01-25

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