SEMICONDUCTOR TECHNOLOGY

Study on the failure temperature of Ti/Pt/Au and Pt5Si2-Ti/Pt/Au metallization systems

Jie Zhang, Jianqiang Han, Yijun Yin, Lizhen Dong and Wenju Niu

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 Corresponding author: Jianqiang Han Email: hjqsmx@163.com

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Abstract: The Ti/Pt/Au metallization system has an advantage of resisting KOH or TMAH solution etching. To form a good ohmic contact, the Ti/Pt/Au metallization system must be alloyed at 400℃. However, the process temperatures of typical MEMS packaging technologies, such as anodic bonding, glass solder bonding and eutectic bonding, generally exceed 400℃. It is puzzling if the Ti/Pt/Au system is destroyed during the subsequent packaging process. In the present work, the resistance of doped polysilicon resistors contacted by the Ti/Pt/Au metallization system that have undergone different temperatures and time are measured. The experimental results show that the ohmic contacts will be destroyed if heated to 500℃. But if a 20 nm Pt film is sputtered on heavily doped polysilicon and alloyed at 700℃ before sputtering Ti/Pt/Au films, the Pt5Si2-Ti/Pt/Au metallization system has a higher service temperature of 500℃, which exceeds process temperatures of most typical MEMS packaging technologies.

Key words: Ti/Pt/Au metallization systempackagingohmic contactsMEMS



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Card H C. Aluminum-silicon Schottky barriers and ohmic contacts in integrated circuits. IEEE Trans Electron Devices, 1976, 23(6):538 doi: 10.1109/T-ED.1976.18449
[2]
Mayumi S, Umemoto T, Shishino M, et al. The effect of Cu addition to Al-Si interconnects on stress induced open-circuit failures. Reliab Phys Symp, 1987:15 https://www.mendeley.com/research-papers/effect-cu-addition-alsi-interconnects-stress-induced-opencircuit-failures/
[3]
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[4]
Sozza A, Dua C, Kerlain A, et al. Long-term reliability of Ti-Pt-Au metallization system for Schottky contact and first-level metallization on SiC MESFET. Microelectron Reliab, 2004, 44(7):1109 doi: 10.1016/j.microrel.2004.01.017
[5]
Zhou J, Xia G, Li B, et al, Structural and electrical properties of Au/Pt/Ti ohmic contacts to degenerated doped n-GaAS. Appl Phys A, 2003, 76(6):939 doi: 10.1007/s00339-002-1439-z
[6]
Wang G H, Liu Z M, Dai J L. Application of Ti-Pt-Au multi-layer metallized syetem to semiconductor devices. J Harbin Institute Technol, 1985, (4):26 http://en.cnki.com.cn/Article_en/CJFDTotal-HEBX198504004.htm
[7]
Wu Z W, Chen D Y, Xia S H. Research on the failed mechanism of anodic bonding of silicon to glass. Micronanoelectron Technol, 2010, 10:619 http://en.cnki.com.cn/Article_en/CJFDTOTAL-BDTQ201010008.htm
[8]
Xu W, Wang Y C, Luo L. Wafer-level hermetic packaging of MEMS by glass solder at low temperature. J Func Mater Devices, 2005, 11:343 http://en.cnki.com.cn/Article_en/CJFDTOTAL-GNCQ200503016.htm
[9]
Liu B W, Zhang Z H, Tan Z M, et al. Au-Si eutectic bonding technology for MEMS device. Semicond Technol, 2006, 12:896 http://en.cnki.com.cn/Article_en/CJFDTOTAL-BDTJ200612004.htm
[10]
Zhong B F. An approach to PtSi contact alloying. Microelectronics, 1988, 18:1 http://en.cnki.com.cn/Article_en/CJFDTotal-MINI198804000.htm
[11]
Xiong P, Liao S R. Study on the formation of PtSi with Pt-Si alloy. Semicond Optoelectron, 1992, 13:359 http://en.cnki.com.cn/Article_en/CJFDTotal-BDTG199204012.htm
[12]
Yin J H, Cai W, Wang M G, et al Surface and interface characteristic of sputtered nanometer PtSi film. J Semicond, 2003, 24(S1):74 http://ieeexplore.ieee.org/document/4963291/
[13]
Wang Q, Ding J N, Wang W X, et al. Fabrication of a pressure sensor gauge chip based on SIMOX. J Semicond, 2005, 26:1595 http://www.oalib.com/paper/1519655
[14]
Yin Y, Rioux R M, Erdonmez C K, et al. Formation of hollow nanocrystals through the nanoscale Kirkendall effect. Science, 2004, 304(5671):711 doi: 10.1126/science.1096566
[15]
Campbell S A. Fabrication engineering at the micro and nanoscale. 3th ed. Beijing: Publishing House of Electronics Industry, 2008
[16]
Wu D F, Yan B D. Metallurgical basis of ohmic contacts. Principle, measurement and process of ohmic contact at metal-semiconductor interface. Shanghai:Profile of Shanghai Jiao Tong University Press, 1989
Fig. 1.  The micro-fabrication processes sequence of the metal lines

Fig. 2.  (Color online) The resistance of resistors connected by the Ti/Pt/Au system alloyed at 400 ℃ for different time

Fig. 3.  (Color online) The resistances of polysilicon resistors connected by the Ti/Pt/Au system annealing at different temperatures for 30 min

Fig. 4.  (Color online) The resistances of polysilicon resistors connected by the Pt$_{\mathrm{5}}$Si$_{\mathrm{2}}$-Ti/Pt/Au system annealing at different temperatures for 30 min

Fig. 5.  (Color online) The resistances of polysilicon resistors after different annealing time

Table 1.   The resistance of polysilicon resistors connected by Ti/Pt/Au system that have undergone different temperature and time

Table 2.   The resistance of polysilicon resistors connected by Pt$_{\mathrm{5}}$Si$_{\mathrm{2}}$-Ti/Pt/Au system that have undergone different temperature and time

[1]
Card H C. Aluminum-silicon Schottky barriers and ohmic contacts in integrated circuits. IEEE Trans Electron Devices, 1976, 23(6):538 doi: 10.1109/T-ED.1976.18449
[2]
Mayumi S, Umemoto T, Shishino M, et al. The effect of Cu addition to Al-Si interconnects on stress induced open-circuit failures. Reliab Phys Symp, 1987:15 https://www.mendeley.com/research-papers/effect-cu-addition-alsi-interconnects-stress-induced-opencircuit-failures/
[3]
Kanamori S, Sudo H. Effects of titanium layer as diffusion barrier in Ti/Pt/Au beam lead metallization on polysilicon. IEEE Trans Compon, 1982, 5(3):318 http://ieeexplore.ieee.org/document/1135973/
[4]
Sozza A, Dua C, Kerlain A, et al. Long-term reliability of Ti-Pt-Au metallization system for Schottky contact and first-level metallization on SiC MESFET. Microelectron Reliab, 2004, 44(7):1109 doi: 10.1016/j.microrel.2004.01.017
[5]
Zhou J, Xia G, Li B, et al, Structural and electrical properties of Au/Pt/Ti ohmic contacts to degenerated doped n-GaAS. Appl Phys A, 2003, 76(6):939 doi: 10.1007/s00339-002-1439-z
[6]
Wang G H, Liu Z M, Dai J L. Application of Ti-Pt-Au multi-layer metallized syetem to semiconductor devices. J Harbin Institute Technol, 1985, (4):26 http://en.cnki.com.cn/Article_en/CJFDTotal-HEBX198504004.htm
[7]
Wu Z W, Chen D Y, Xia S H. Research on the failed mechanism of anodic bonding of silicon to glass. Micronanoelectron Technol, 2010, 10:619 http://en.cnki.com.cn/Article_en/CJFDTOTAL-BDTQ201010008.htm
[8]
Xu W, Wang Y C, Luo L. Wafer-level hermetic packaging of MEMS by glass solder at low temperature. J Func Mater Devices, 2005, 11:343 http://en.cnki.com.cn/Article_en/CJFDTOTAL-GNCQ200503016.htm
[9]
Liu B W, Zhang Z H, Tan Z M, et al. Au-Si eutectic bonding technology for MEMS device. Semicond Technol, 2006, 12:896 http://en.cnki.com.cn/Article_en/CJFDTOTAL-BDTJ200612004.htm
[10]
Zhong B F. An approach to PtSi contact alloying. Microelectronics, 1988, 18:1 http://en.cnki.com.cn/Article_en/CJFDTotal-MINI198804000.htm
[11]
Xiong P, Liao S R. Study on the formation of PtSi with Pt-Si alloy. Semicond Optoelectron, 1992, 13:359 http://en.cnki.com.cn/Article_en/CJFDTotal-BDTG199204012.htm
[12]
Yin J H, Cai W, Wang M G, et al Surface and interface characteristic of sputtered nanometer PtSi film. J Semicond, 2003, 24(S1):74 http://ieeexplore.ieee.org/document/4963291/
[13]
Wang Q, Ding J N, Wang W X, et al. Fabrication of a pressure sensor gauge chip based on SIMOX. J Semicond, 2005, 26:1595 http://www.oalib.com/paper/1519655
[14]
Yin Y, Rioux R M, Erdonmez C K, et al. Formation of hollow nanocrystals through the nanoscale Kirkendall effect. Science, 2004, 304(5671):711 doi: 10.1126/science.1096566
[15]
Campbell S A. Fabrication engineering at the micro and nanoscale. 3th ed. Beijing: Publishing House of Electronics Industry, 2008
[16]
Wu D F, Yan B D. Metallurgical basis of ohmic contacts. Principle, measurement and process of ohmic contact at metal-semiconductor interface. Shanghai:Profile of Shanghai Jiao Tong University Press, 1989
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    Received: 17 January 2017 Revised: 15 February 2017 Online: Published: 01 September 2017

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      Jie Zhang, Jianqiang Han, Yijun Yin, Lizhen Dong, Wenju Niu. Study on the failure temperature of Ti/Pt/Au and Pt5Si2-Ti/Pt/Au metallization systems[J]. Journal of Semiconductors, 2017, 38(9): 096005. doi: 10.1088/1674-4926/38/9/096005 J Zhang, J Q Han, Y J Yin, L Z Dong, W J Niu. Study on the failure temperature of Ti/Pt/Au and Pt5Si2-Ti/Pt/Au metallization systems[J]. J. Semicond., 2017, 38(9): 096005. doi: 10.1088/1674-4926/38/9/096005.Export: BibTex EndNote
      Citation:
      Jie Zhang, Jianqiang Han, Yijun Yin, Lizhen Dong, Wenju Niu. Study on the failure temperature of Ti/Pt/Au and Pt5Si2-Ti/Pt/Au metallization systems[J]. Journal of Semiconductors, 2017, 38(9): 096005. doi: 10.1088/1674-4926/38/9/096005

      J Zhang, J Q Han, Y J Yin, L Z Dong, W J Niu. Study on the failure temperature of Ti/Pt/Au and Pt5Si2-Ti/Pt/Au metallization systems[J]. J. Semicond., 2017, 38(9): 096005. doi: 10.1088/1674-4926/38/9/096005.
      Export: BibTex EndNote

      Study on the failure temperature of Ti/Pt/Au and Pt5Si2-Ti/Pt/Au metallization systems

      doi: 10.1088/1674-4926/38/9/096005
      Funds:

      the National Natural Science Foundation of China No.61376114

      Project supported by the National Natural Science Foundation of China (No.61376114)

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      • Corresponding author: Jianqiang Han Email: hjqsmx@163.com
      • Received Date: 2017-01-17
      • Revised Date: 2017-02-15
      • Published Date: 2017-09-01

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