A reconfigurable 256 × 256 image sensor controller that is compatible for depth measurement

Zhe Chen; Shan Di; Cong Shi; Liyuan Liu; Nanjian Wu

doi:10.1088/1674-4926/35/10/105007

J. Semicond. > 2014, Volume 35 > Issue 10 > 105007, doi: 10.1088/1674-4926/35/10/105007

SEMICONDUCTOR INTEGRATED CIRCUITS

A reconfigurable 256 × 256 image sensor controller that is compatible for depth measurement

Zhe Chen, Shan Di, Cong Shi, Liyuan Liu and Nanjian Wu

+ Author Affiliations

Corresponding author: Nanjian Wu, Email:nanjian@semi.ac.cn

Abstract: This paper presents an image sensor controller that is compatible for depth measurement, which is based on the continuous-wave modulation time-of-flight technology. The image sensor controller is utilized to generate reconfigurable control signals for a 256×256 high speed CMOS image sensor with a conventional image sensing mode and a depth measurement mode. The image sensor controller generates control signals for the pixel array to realize the rolling exposure and the correlated double sampling functions. An refined circuit design technique in the logic level is presented to reduce chip area and power consumption. The chip, with a size of 700×3380 μm², is fabricated in a standard 0.18 μm CMOS image sensor process. The power consumption estimated by the synthesis tool is 65 mW under a 1.8 V supply voltage and a 100 MHz clock frequency. Our test results show that the image sensor controller functions properly.

Key words: CMOS image sensor, depth measurement, time-of-flight

References

[1]	Coren S, Ward L M, Enns J T. Sensation and perception. Harcourt Brace College Publishers, 1994
[2]	Mikhail E M, Betherl J S, McGlone J C. Introduction to modern photogrammetry. New York: John Wiley & Sons, Inc. , 2001
[3]	Remondino F, Stoppa D. TOF range-imaging cameras. Springer, 2013
[4]	Spirig T, Seitz P, Vietze O, et al. The lock-in CCD-two-dimensional synchronous detection of light. IEEE J Quantum Electron, 1995, 31(9):1705 doi: 10.1109/3.406386
[5]	Lange R, Seitz P. Solid-state time-of-flight range camera. IEEE J Quantum Electron, 2001, 37(3):390 doi: 10.1109/3.910448
[6]	Foix S, Alenya G, Torras C. Lock-in time-of-flight (ToF) cameras:a survey. IEEE Sensors J, 2011, 11(9):1917 doi: 10.1109/JSEN.2010.2101060
[7]	Perenzoni M, Massari N, Stoppa D, et al. A 160×120-pixels range camera with in-pixel correlated double sampling and fixed-pattern noise correction. IEEE J Solid-State Circuits, 2011, 46(7):1672 doi: 10.1109/JSSC.2011.2144130
[8]	Jin K S, Kim J D K, Byongmin K, et al. A CMOS image sensor based on unified pixel architecture with time-division multiplexing scheme for color and depth image acquisition. IEEE J Solid-State Circuits, 2012, 47(11):2834 doi: 10.1109/JSSC.2012.2214179
[9]	Stoppa D, Massari N, Pancheri L, et al. A range image sensor based on 10-μm lock-in pixels in 0.18μm CMOS imaging technology. IEEE J Solid-State Circuits, 2011, 46(1):248 doi: 10.1109/JSSC.2010.2085870
[10]	Jin K S, Byongmin K, Kim J D K, et al. A 1920×10803. 65μm-pixel 2D/3D image sensor with split and binning pixel structure in 0. 11μm standard CMOS. ISSCC Dig Tech Papers, 2012: 396
[11]	Niclass C, Favi C, Kluter T, et al. A 128×128 single-photon image sensor with column-level 10-bit time-to-digital converter array. IEEE J Solid-State Circuits, 2008, 43(12):2977 doi: 10.1109/JSSC.2008.2006445
[12]	Niclass C, Favi C, Kluter T, et al. Single-photon synchronous detection. IEEE J Solid-State Circuits, 2009, 44(7):1977 doi: 10.1109/JSSC.2009.2021920
[13]	Stoppa D, Pancheri L, Scandiuzzo M, et al. A CMOS 3-D imager based on single photon avalanche diode. IEEE Trans Circuits Syst Ⅰ, Reg Papers, 2007, 54(1):4 doi: 10.1109/TCSI.2006.888679
[14]	Niclass C, Soga M, Matsubara H, et al. A 100-m range 10-frame/s 340×96-pixel time-of-flight depth sensor in 0.18-μm CMOS. IEEE J Solid-State Circuits, 2013, 48(2):559 doi: 10.1109/JSSC.2012.2227607
[15]	Niclass C, Soga M, Matsubara H, et al. A 0.18-μm CMOS SoC for a 100-m-range 10-frame/s 200×96-pixel time-of-flight depth sensor. IEEE J Solid-State Circuits, 2014, 49(1):315 doi: 10.1109/JSSC.2013.2284352
[16]	Cao Zhongxiang, Zhou Yangfan, Li Quanliang, et al. Design of pixel for high speed CMOS image sensors. International Image Sensor Workshop, 2013

Fig. 1. ToF camera setup for depth measurement.

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Fig. 2. Schematic of the pixel.

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Fig. 3. Cross-section structure of the pixel.

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Fig. 4. Timing diagram of a single frame for 3D exposure.

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Fig. 5. Image sensor architecture.

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Fig. 6. Generating rolling shutter control signals for depth measurement.

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Fig. 7. Parameter registers in the image sensor controller.

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Fig. 8. State machine of the image sensor controller.

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Fig. 9. Microphotograph of the image sensor controller.

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Fig. 10. Photo of the test platform for the time-of-flight image sensor.

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Fig. 11. Waveform of the sensor output signals captured in the 3D mode.

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Fig. 12. (a) Test waveform captured by the SignalTap tool. (b) Simulated result with Matlab.

DownLoad: Full-Size Img PowerPoint

Table 1. List of partial reconfigurable parameters of the image sensor controller.

[1]	Coren S, Ward L M, Enns J T. Sensation and perception. Harcourt Brace College Publishers, 1994
[2]	Mikhail E M, Betherl J S, McGlone J C. Introduction to modern photogrammetry. New York: John Wiley & Sons, Inc. , 2001
[3]	Remondino F, Stoppa D. TOF range-imaging cameras. Springer, 2013
[4]	Spirig T, Seitz P, Vietze O, et al. The lock-in CCD-two-dimensional synchronous detection of light. IEEE J Quantum Electron, 1995, 31(9):1705 doi: 10.1109/3.406386
[5]	Lange R, Seitz P. Solid-state time-of-flight range camera. IEEE J Quantum Electron, 2001, 37(3):390 doi: 10.1109/3.910448
[6]	Foix S, Alenya G, Torras C. Lock-in time-of-flight (ToF) cameras:a survey. IEEE Sensors J, 2011, 11(9):1917 doi: 10.1109/JSEN.2010.2101060
[7]	Perenzoni M, Massari N, Stoppa D, et al. A 160×120-pixels range camera with in-pixel correlated double sampling and fixed-pattern noise correction. IEEE J Solid-State Circuits, 2011, 46(7):1672 doi: 10.1109/JSSC.2011.2144130
[8]	Jin K S, Kim J D K, Byongmin K, et al. A CMOS image sensor based on unified pixel architecture with time-division multiplexing scheme for color and depth image acquisition. IEEE J Solid-State Circuits, 2012, 47(11):2834 doi: 10.1109/JSSC.2012.2214179
[9]	Stoppa D, Massari N, Pancheri L, et al. A range image sensor based on 10-μm lock-in pixels in 0.18μm CMOS imaging technology. IEEE J Solid-State Circuits, 2011, 46(1):248 doi: 10.1109/JSSC.2010.2085870
[10]	Jin K S, Byongmin K, Kim J D K, et al. A 1920×10803. 65μm-pixel 2D/3D image sensor with split and binning pixel structure in 0. 11μm standard CMOS. ISSCC Dig Tech Papers, 2012: 396
[11]	Niclass C, Favi C, Kluter T, et al. A 128×128 single-photon image sensor with column-level 10-bit time-to-digital converter array. IEEE J Solid-State Circuits, 2008, 43(12):2977 doi: 10.1109/JSSC.2008.2006445
[12]	Niclass C, Favi C, Kluter T, et al. Single-photon synchronous detection. IEEE J Solid-State Circuits, 2009, 44(7):1977 doi: 10.1109/JSSC.2009.2021920
[13]	Stoppa D, Pancheri L, Scandiuzzo M, et al. A CMOS 3-D imager based on single photon avalanche diode. IEEE Trans Circuits Syst Ⅰ, Reg Papers, 2007, 54(1):4 doi: 10.1109/TCSI.2006.888679
[14]	Niclass C, Soga M, Matsubara H, et al. A 100-m range 10-frame/s 340×96-pixel time-of-flight depth sensor in 0.18-μm CMOS. IEEE J Solid-State Circuits, 2013, 48(2):559 doi: 10.1109/JSSC.2012.2227607
[15]	Niclass C, Soga M, Matsubara H, et al. A 0.18-μm CMOS SoC for a 100-m-range 10-frame/s 200×96-pixel time-of-flight depth sensor. IEEE J Solid-State Circuits, 2014, 49(1):315 doi: 10.1109/JSSC.2013.2284352
[16]	Cao Zhongxiang, Zhou Yangfan, Li Quanliang, et al. Design of pixel for high speed CMOS image sensors. International Image Sensor Workshop, 2013

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Received: 18 February 2014 Revised: 21 April 2014 Online: Published: 01 October 2014

This paper presents an image sensor controller that is compatible for depth measurement, which is based on the continuous-wave modulation time-of-flight technology. The image sensor controller is utilized to generate reconfigurable control signals for a 256×256 high speed CMOS image sensor with a conventional image sensing mode and a depth measurement mode. The image sensor controller generates control signals for the pixel array to realize the rolling exposure and the correlated double sampling functions. An refined circuit design technique in the logic level is presented to reduce chip area and power consumption. The chip, with a size of 700×3380 μm², is fabricated in a standard 0.18 μm CMOS image sensor process. The power consumption estimated by the synthesis tool is 65 mW under a 1.8 V supply voltage and a 100 MHz clock frequency. Our test results show that the image sensor controller functions properly.

A reconfigurable 256 × 256 image sensor controller that is compatible for depth measurement

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