| Citation: |
Cheng Caijing, Ding Jiaxin, Zhang Xiangfeng, Zhao Hongyan, Lu Zhengxiong, Si Junjie, Sun Weiguo, Sang Liwen, Zhang Guoyi. A Back-Illuminated Al0.42Ga0.58N/Al0.40Ga0.60N Heterojunction p-i-n Solar-Blind UV Photodetector[J]. Journal of Semiconductors, 2008, In Press.
Cheng C J, Ding J X, Zhang X F, Zhao H Y, Lu Z X, Si J J, Sun W G, Sang L W, Zhang G Y. A Back-Illuminated Al0.42Ga0.58N/Al0.40Ga0.60N Heterojunction p-i-n Solar-Blind UV Photodetector[J]. J. Semicond., 2008, 29(3): 566.
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A Back-Illuminated Al0.42Ga0.58N/Al0.40Ga0.60N Heterojunction p-i-n Solar-Blind UV Photodetector
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Abstract
Back-illuminated Al0.42Ga0.58N/Al0.40Ga0.60N heterojunction p-i-n solar-blind UV photodetectors grown on sapphire by metal organic chemical vapor deposition are fabricated.An ideality factor of n=3 and a series resistance of RS=93Ω are obtained from the forward current-voltage curve of the device.The external quantum efficiency and detectivity at a peak wavelength of 275nm at zero-bias voltage are 9% and 4.98e11cm·Hz1/2·W-1,respectively.Mere 15.7% of the spectral transmittance of the Al0.42Ga0.58N window layer at 275nm results in the low external quantum efficiency and detectivity. -
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