| Citation: |
Sun Jianhai, Cui Dafu, Xiao Jiang. Fabrication and Numerical Simulation of a Micromachined Contact Cantilever RF-MEMS Switch[J]. Journal of Semiconductors, 2006, In Press.
Sun J H, Cui D F, Xiao J. Fabrication and Numerical Simulation of a Micromachined Contact Cantilever RF-MEMS Switch[J]. Chin. J. Semicond., 2006, 27(2): 309.
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Fabrication and Numerical Simulation of a Micromachined Contact Cantilever RF-MEMS Switch
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Abstract
This paper reports a contact cantilever MEMS switch.The designed switch has a metal cantilever that acts as an electrostatically activated switch with processing options to achieve dielectric isolation of the control-voltage path from the signal path.To obtain good material properties,an ANSYS FEA tool is used to optimize the structure.The RF MEMS switch is fabricated via a surface micromachining process.The switch has an actuation voltage of 12V,which is close to the simulated value of 11V.The measured and the HFSS simulated isolations are both higher than -20dB from 0.05 to 10GHz.The measured insertion loss is less than -0.9dB,relatively larger than the simulated loss of less than -0.2dB from 0.05 to 10GHz.This is because a contact resistance introduced due to poor physical contact between the bottom lines and the metal cantilever.-
Keywords:
- cantilever RF-MEMS switch,
- insertion loss,
- isolation
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References
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Proportional views
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