| Citation: |
Cao Yanrong, Ma Xiaohua, Hao Yue, Yu Lei, Zhu Zhiwei, Chen Haifeng. Models and Related Mechanisms of NBTI Degradation of 90nm pMOSFETs[J]. Journal of Semiconductors, 2007, In Press.
Cao Y R, Ma X H, Hao Y, Yu L, Zhu Z W, Chen H F. Models and Related Mechanisms of NBTI Degradation of 90nm pMOSFETs[J]. Chin. J. Semicond., 2007, 28(5): 665.
Export: BibTex EndNote
|
Models and Related Mechanisms of NBTI Degradation of 90nm pMOSFETs
-
Abstract
We investigate the negative bias temperature instability (NBTI) of 90nm pMOSFETs under various temperatures and stress gate voltages (Vg).We also study models of the time (t),temperature (T),and stress Vg dependence of 90nm pMOSFETs NBTI degradation.The time model and temperature model are similar to previous studies,with small difference in the key coefficients.A power-law model is found to hold for Vg,which is different from the conventional exponential Vg model.The new model is more predictive than the exponential model when taking lower stress Vg into account. -
References
-
Proportional views
DownLoad: