J. Semicond. > 2016, Volume 37 > Issue 2 > 024011, doi: 10.1088/1674-4926/37/2/024011
|

SEMICONDUCTOR DEVICES

A high-conductivity insulated gate bipolar transistor with Schottky hole barrier contact

Mengxuan Jiang1, , Z. John Shen1, Jun Wang1, Xin Yin1, Zhikang Shuai1 and Jiang Lu2

+ Author Affiliations

 Corresponding author: Mengxuan Jiang, Email: mengxuanjiang@qq.com

PDF

Abstract: This letter proposes a high-conductivity insulated gate bipolar transistor (HC-IGBT) with Schottky contact formed on the p-base, which forms a hole barrier at the p-base side to enhance the conductivity modulation effect. TCAD simulation shows that the HC-IGBT provides a current density increase by 53% and turn-off losses decrease by 27% when compared to a conventional field-stop IGBT (FS-IGBT). Hence, the proposed IGBT exhibits superior electrical performance for high-efficiency power electronic systems.

Key words: breakdown voltage, conductivity modulation, current density, latch up, IGBT



[1]
[2]
[3]
[4]
[5]
[6]
[7]
[8]
[9]
[10]
[11]
[12]
[13]
[14]
[15]
Fig. 1.  (a) Proposed HC-IGBT and (b) conventional FS-IGBT structures.

DownLoad: Full-Size Img PowerPoint
Fig. 2.  (Color online) Forward-blocking characteristics of the HC-IGBT and FS-IGBT at a gate voltage of 0 V. The inset of Figure 2 shows the breakdown voltage of the HC-IGBT varies with the work function of the emitter metal.

DownLoad: Full-Size Img PowerPoint
Fig. 3.  (Color online) Potential distribution of the HC-IGBT and FS-IGBT along the vertical direction between the emitter metal, the n$^+$ source, the p-base, and part of the n-drift region under the avalanche conditions.

DownLoad: Full-Size Img PowerPoint
Fig. 4.  (Color online) Forward-conduction characteristics of the HC-IGBT and FS-IGBT at a gate voltage of 15 V. The inset of Figure 4 shows the conductivity modulation effect of the HC-IGBT changes with the work function of the emitter metal.

DownLoad: Full-Size Img PowerPoint
Fig. 5.  (Color online) Potential distribution of the HC-IGBT and FS-IGBT along the vertical direction between the emitter metal, the n$^+$ source, the p-base, and part of the n-drift region at a current density of 150 A/cm$^2$.

DownLoad: Full-Size Img PowerPoint
Fig. 6.  (Color online) Hole concentration distribution of the HC-IGBT and FS-IGBT along the vertical direction of the n-type drift region at 150 A/cm$^2$.

DownLoad: Full-Size Img PowerPoint
Fig. 7.  (Color online) Transfer characteristics of the HC-IGBT and FS-IGBT at collector voltage of 1.64 V.

DownLoad: Full-Size Img PowerPoint
Fig. 8.  (Color online) Turn-off test circuit. The DC bus voltage is set at 600 V, the gate voltage is set at $\pm$15 V, the load current density at 150 A/cm$^2$ and the stray inductance at 60 nH and the gate resistor at 5 $\Omega $.

DownLoad: Full-Size Img PowerPoint
Fig. 9.  (Color online) Turn-off waveforms of the HC-IGBT and FS-IGBT at a current density of 150 A/cm$^2$, a bus voltage of 600 V, stray inductance of 10 nH and agate voltage of 15 V.

DownLoad: Full-Size Img PowerPoint
Fig. 10.  Turn-off losses characteristics of the HC-IGBT and FS-IGBT by varying p$^+$ collector concentration at current density of 150 A/cm$^2$, bus voltage of 600 V, gate resistor of 5 $\Omega$ and stray inductance of 60 nH.

DownLoad: Full-Size Img PowerPoint
Fig. 11.  Color online) FBSOA test of the HC-IGBT at gate voltage of 15 V. The conventional FS-IGBT with the same conditions is also included for comparison.

DownLoad: Full-Size Img PowerPoint
Fig. 12.  (Color online) RBSOA switching waveforms of the HC-IGBT and FS-IGBT at a current density of 1200 A/cm$^2$, a bus voltage of 1000 V, stray inductance of 10 nH and thermal resistance of 20 ℃/cm$^2$$\cdot$kW.

DownLoad: Full-Size Img PowerPoint
Fig. 13.  (Color online) Short-circuit switching waveforms of the HC-IGBT and FS-IGBT at gate voltage of 15 V, bus voltage of 600 V, gate resistor of 5 $\Omega$, stray inductance of 10 nH and thermal resistance of 20 ℃/cm$^2$$\cdot$kW.

DownLoad: Full-Size Img PowerPoint

Table 1.   Major device parameters.

DownLoad: CSV
[1]
[2]
[3]
[4]
[5]
[6]
[7]
[8]
[9]
[10]
[11]
[12]
[13]
[14]
[15]

    • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 3197 Times PDF downloads: 28 Times Cited by: 0 Times

    History

    Received: 09 November 2015 Revised: Online: Published: 01 February 2016

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Send
      Article Navigation >  Journal of Semiconductors  > 2016  >  37(2): 024011
      Mengxuan Jiang, Z. John Shen, Jun Wang, Xin Yin, Zhikang Shuai, Jiang Lu. A high-conductivity insulated gate bipolar transistor with Schottky hole barrier contact[J]. Journal of Semiconductors, 2016, 37(2): 024011. doi: 10.1088/1674-4926/37/2/024011 M X Jiang, Z. John Shen, J Wang, X Yin, Z K Shuai, J Lu. A high-conductivity insulated gate bipolar transistor with Schottky hole barrier contact[J]. J. Semicond., 2016, 37(2): 024011. doi: 10.1088/1674-4926/37/2/024011.Export: BibTex EndNote
      Citation:
      Mengxuan Jiang, Z. John Shen, Jun Wang, Xin Yin, Zhikang Shuai, Jiang Lu. A high-conductivity insulated gate bipolar transistor with Schottky hole barrier contact[J]. Journal of Semiconductors, 2016, 37(2): 024011. doi: 10.1088/1674-4926/37/2/024011

      M X Jiang, Z. John Shen, J Wang, X Yin, Z K Shuai, J Lu. A high-conductivity insulated gate bipolar transistor with Schottky hole barrier contact[J]. J. Semicond., 2016, 37(2): 024011. doi: 10.1088/1674-4926/37/2/024011.
      Export: BibTex EndNote
      shu

      A high-conductivity insulated gate bipolar transistor with Schottky hole barrier contact

      doi: 10.1088/1674-4926/37/2/024011
      • 1.

        College of Electrical and Information Engineering, Hunan University, Changsha 410082, China

      • 2.

        Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China

      Funds:

      Project supported by the National High Technology Research and Development Program of China (No. 2014AA052601) and the National Natural Science Foundation of China (No. 51277060).

      More Information
      • Corresponding author: Email: mengxuanjiang@qq.com
      • Received Date: 2015-11-09
      • Accepted Date: 2015-11-30
      • Published Date: 2016-01-25

      Catalog

        Journal of Semiconductors © 2017 All Rights Reserved   京ICP备05085259号-2

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return