J. Semicond. > 2015, Volume 36 > Issue 7 > 074009, doi: 10.1088/1674-4926/36/7/074009
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SEMICONDUCTOR DEVICES

Fabrication of ridge waveguide of 808 nm GaAs-based laser diodes by wet chemical etching

Xiang Li1, Degang Zhao1, Desheng Jiang1, Ping Chen1, Zongshun Liu1, Jianjun Zhu1, Ming Shi1, Danmei Zhao1, , Wei Liu1, Shuming Zhang2 and Hui Yang1, 2

+ Author Affiliations

 Corresponding author: Danmei Zhao, E-mail: dgzhao@semi.ac.cn

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Abstract: The fabrication of ridge waveguide of 808 nm GaAs-based laser diodes by wet chemical etching is investigated. The etching behavior of GaAs, InGaP and AlGaInP in various solutions is evaluated. As a result, the etching solutions simultaneously corroding InGaP and AlGaInP layers are searched successfully. Effects of etching time and the concentration of mixtures on etching depth and the geometrical shape of ridge are analyzed. It is found that under proper conditions, appropriate etching depth and smooth surfaces can be obtained and the steep degree of pattern can be accepted, especially for wide ridge waveguide laser diodes.

Key words: GaAs-based laser, ridge depth, wet etching



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Fig. 1.  Schematic diagrams of GaAs-based laser diodes structure.

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Fig. 2.  AFM images of a ridge fabricated by (a) 40 s, (b) 50 s, (c) 60 s immersion in 3 H$_{3}$PO$_{4}$ : 1 H$_{2}$O$_{2}$ : 1 H$_{2}$O followed by an 80 s immersion in InGaP and AlGaInP etchants.

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Fig. 3.  An AFM image of a ridge fabricated by wet etching.

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Fig. 4.  Effects of Br$_{2}$ content (square) in $y_{1}$Br$_{2}$ : 100 HBr : 100 H$_{2}$O mixtures and HBr content (triangle) in 10 Br$_{2}$ : $y_{2}$HBr : 100 H$_{2}$O mixtures on etching depth.

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Fig. 5.  The dependence of etching depth on etching time with the first 40 s immersion in 3 H$_{3}$PO$_{4}$ : 1 H$_{2}$O$_{2}$ : 1 H$_{2}$O followed by an immersion in 2 Br$_{2}$ : 5 HBr : 5 H$_{2}$O.

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Fig. 6.  The dependence of ditch depth $h_{1}$ (square) and inclination angle $\theta$ (triangle) on etching time with the first 40 s immersion in 3~H$_{3}$PO$_{4}$ : 1 H$_{2}$O$_{2}$ : 1 H$_{2}$O followed by an immersion in 2 Br$_{2}$ : 5~HBr : 5 H$_{2}$O.

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    Received: 01 December 2014 Revised: Online: Published: 01 July 2015

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      Article Navigation >  Journal of Semiconductors  > 2015  >  36(7): 074009
      Xiang Li, Degang Zhao, Desheng Jiang, Ping Chen, Zongshun Liu, Jianjun Zhu, Ming Shi, Danmei Zhao, Wei Liu, Shuming Zhang, Hui Yang. Fabrication of ridge waveguide of 808 nm GaAs-based laser diodes by wet chemical etching[J]. Journal of Semiconductors, 2015, 36(7): 074009. doi: 10.1088/1674-4926/36/7/074009 X Li, D G Zhao, D S Jiang, P Chen, Z S Liu, J J Zhu, M Shi, D M Zhao, W Liu, S M Zhang, H Yang. Fabrication of ridge waveguide of 808 nm GaAs-based laser diodes by wet chemical etching[J]. J. Semicond., 2015, 36(7): 074009. doi: 10.1088/1674-4926/36/7/074009.Export: BibTex EndNote
      Citation:
      Xiang Li, Degang Zhao, Desheng Jiang, Ping Chen, Zongshun Liu, Jianjun Zhu, Ming Shi, Danmei Zhao, Wei Liu, Shuming Zhang, Hui Yang. Fabrication of ridge waveguide of 808 nm GaAs-based laser diodes by wet chemical etching[J]. Journal of Semiconductors, 2015, 36(7): 074009. doi: 10.1088/1674-4926/36/7/074009

      X Li, D G Zhao, D S Jiang, P Chen, Z S Liu, J J Zhu, M Shi, D M Zhao, W Liu, S M Zhang, H Yang. Fabrication of ridge waveguide of 808 nm GaAs-based laser diodes by wet chemical etching[J]. J. Semicond., 2015, 36(7): 074009. doi: 10.1088/1674-4926/36/7/074009.
      Export: BibTex EndNote
      shu

      Fabrication of ridge waveguide of 808 nm GaAs-based laser diodes by wet chemical etching

      doi: 10.1088/1674-4926/36/7/074009
      • 1.

        State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

      • 2.

        Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China

      Funds:

      Project supported by the National Natural Science Foundation of China (Nos. 61474110, 61377020, 61376089, 61223005, 61176126) and the National Science Fund for Distinguished Young Scholars (No. 60925017).

      More Information
      • Corresponding author: E-mail: dgzhao@semi.ac.cn
      • Received Date: 2014-12-01
      • Accepted Date: 2015-03-09
      • Published Date: 2015-01-25

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