Chin. J. Semicond. > 2007, Volume 28 > Issue S1 > 552-554

Barriers of Au/CdZnTe with Synchrotron Radiation

Zha Gangqiang, Tan Tingting, Zhang Wenhua and Jie Wanqi

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Abstract: Au Schottky contact was deposited oil clean CZT(110) and (111)A surfaces by molecular beam epitaxy.Synchro· tron radiation photoemission spectroscopy (SRPES) was used to studied the real Schottky barrier of Au/CdZnTe.The real Schottky barrier heights were measured to be 0.738 and 0.566eV,respectively.Using metal-induced gap states (MIGS) model,the results of experiment were explained.

Key words: CdZnTeSchottky barrierSRPESmetal-induced gap states

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    Received: 27 May 2016 Revised: Online: Published: 01 January 2007

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      Zha Gangqiang, Tan Tingting, Zhang Wenhua, Jie Wanqi. Barriers of Au/CdZnTe with Synchrotron Radiation[J]. Journal of Semiconductors, 2007, In Press. Zha G Q, Tan T T, Zhang W H, Jie W Q. Barriers of Au/CdZnTe with Synchrotron Radiation[J]. Chin. J. Semicond., 2007, 28(S1): 552.Export: BibTex EndNote
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      Zha Gangqiang, Tan Tingting, Zhang Wenhua, Jie Wanqi. Barriers of Au/CdZnTe with Synchrotron Radiation[J]. Journal of Semiconductors, 2007, In Press.

      Zha G Q, Tan T T, Zhang W H, Jie W Q. Barriers of Au/CdZnTe with Synchrotron Radiation[J]. Chin. J. Semicond., 2007, 28(S1): 552.
      Export: BibTex EndNote

      Barriers of Au/CdZnTe with Synchrotron Radiation

      • Received Date: 2016-05-27
      • Published Date: 2016-04-28

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