Monolithic Integration of a Widely Tunable Laser with SOA Using Quantum-Well Intermixing

Liu Hongbo; Zhao Lingjuan; Kan Qiang; Pan Jiaoqing; Wang Lu; Zhu Hongliang; Zhou Fan; Wang Wei

Article Navigation > Journal of Semiconductors > 2008 > 29(9): 1657-1660

Liu Hongbo, Zhao Lingjuan, Kan Qiang, Pan Jiaoqing, Wang Lu, Zhu Hongliang, Zhou Fan, Wang Wei. Monolithic Integration of a Widely Tunable Laser with SOA Using Quantum-Well Intermixing[J]. Journal of Semiconductors, 2008, In Press. Liu H B, Zhao L J, Kan Q, Pan J Q, Wang L, Zhu H L, Zhou F, Wang W. Monolithic Integration of a Widely Tunable Laser with SOA Using Quantum-Well Intermixing[J]. J. Semicond., 2008, 29(9): 1657.Export: BibTex EndNote

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Liu H B, Zhao L J, Kan Q, Pan J Q, Wang L, Zhu H L, Zhou F, Wang W. Monolithic Integration of a Widely Tunable Laser with SOA Using Quantum-Well Intermixing[J]. J. Semicond., 2008, 29(9): 1657.

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Liu H B, Zhao L J, Kan Q, Pan J Q, Wang L, Zhu H L, Zhou F, Wang W. Monolithic Integration of a Widely Tunable Laser with SOA Using Quantum-Well Intermixing[J]. J. Semicond., 2008, 29(9): 1657.

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Monolithic Integration of a Widely Tunable Laser with SOA Using Quantum-Well Intermixing

Key Laboratory of Semiconductor Materials Science,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China
Key Laboratory of Semiconductor Materials Science,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China
Key Laboratory of Semiconductor Materials Science,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China
Key Laboratory of Semiconductor Materials Science,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China
Key Laboratory of Semiconductor Materials Science,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China
Key Laboratory of Semiconductor Materials Science,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China
Key Laboratory of Semiconductor Materials Science,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China
Key Laboratory of Semiconductor Materials Science,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China

Received Date: 2015-08-18
Accepted Date: 2008-04-01
Revised Date: 2008-04-28
Published Date: 2008-09-03

Abstract

Abstract

This paper presents an SG-DBR with a monolithically integrated SOA fabricated using quantum-well intermixing (QWI) for the first time in mainland China.The wavelength tuning range covers 33nm and the output power reaches 10mW with an SOA current of 50mA.The device can work at available channels with SMSR over 35dB.
- tunable laser,
- semiconductor-optical-amplifier,
- ion implantation,
- quantum-well intermixing

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