J. Semicond. > 2015, Volume 36 > Issue 1 > 014002, doi: 10.1088/1674-4926/36/1/014002
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SEMICONDUCTOR DEVICES

Computer modelling and analysis of the photodegradation effect in a-Si:H p-i-n solar cell

A. F. Bouhdjar1, L. Ayat2, AM. Meftah1, 3, N. Sengouga1 and AF. Meftah1

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 Corresponding author: AM. Meftah, E-mail: amjad_meftah@hotmail.com

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Abstract: Using a previous model, which was developed to describe the light-induced creation of the defect density in the a-Si:H gap states, we present in this work a numerical modelling of the photodegradation effect in the a-Si:H p-i-n solar cell under continuous illumination. We first considered the simple case of a monochromatic light beam with a wavelength λ between 530-540 nm non uniformly absorbed, then the global standard solar spectrum (AM 1.5) illumination is taken into account. The photodegradation is analysed on the basis of the resulting changes in the free carrier's densities, recombination rate, band structure, electrical potential and field, space charge, and current densities. Changes in the cell's external parameters: the open circuit voltage Voc, the short circuit current density Jsc, the fill factor FF and the maximum power density Pmax are also presented.

Key words: a-Si:H, Staebler-Wronski effect, p-i-n



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Fig. 1.  Light-induced increase of the density of state in the gap of the a-Si:H.

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Fig. 2.  3D variation of the defect state density.

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Fig. 3.  Dangling bond concentration profiles.

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Fig. 4.  n and p density profiles, under short circuit condition.

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Fig. 5.  Generation and recombination rate profiles.

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Fig. 6.  Trapped charge density profiles in band tails, $p_{\rm t}$, $n_{\rm t}$, and dangling bonds $D^+$, $D^0$, $D^-$.

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Fig. 7.  Gap structure, under short circuit condition in the (a) annealed state and (b) degraded state.

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Fig. 8.  Electric potential profile, under short circuit condition.

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Fig. 9.  Electric field profile, under short circuit condition.

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Fig. 10.  Space charge profile, under short circuit condition.

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Fig. 11.  Electron and hole current densities' profiles.

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Fig. 12.  (a) Drift- and Diffusion-electron current density profiles in annealed state, (b) drift- and diffusion-hole current density profiles in the annealed state, (c) drift- and diffusion-electron current density profiles in the degraded state, and (d) drift- and diffusion-hole current density profiles in the degraded state.

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Table 1.   Simulation parameters of the physical and numerical models.

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Table 2.   The cell photo-parameter degradation when $\mu_{\rm n}$/$\mu_{\rm p}$ $=$ 20/2 (cm$^{2}$/(V$\cdot $s)) and $\mu_{\rm n}$/$\mu_{\rm p}$ $=$ 25/6 (cm$^{2}$/(V$\cdot $s)).

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Table 3.   The solar cell output parameters under the full solar spectrum (AM 1.5) illumination in the annealed and degraded states.

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    Received: 15 July 2014 Revised: Online: Published: 01 January 2015

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      Article Navigation >  Journal of Semiconductors  > 2015  >  36(1): 014002
      A. F. Bouhdjar, L. Ayat, AM. Meftah, N. Sengouga, AF. Meftah. Computer modelling and analysis of the photodegradation effect in a-Si:H p-i-n solar cell[J]. Journal of Semiconductors, 2015, 36(1): 014002. doi: 10.1088/1674-4926/36/1/014002 A. F. Bouhdjar, L. Ayat, AM. Meftah, N. Sengouga, AF. Meftah. Computer modelling and analysis of the photodegradation effect in a-Si:H p-i-n solar cell[J]. J. Semicond., 2015, 36(1): 014002. doi: 10.1088/1674-4926/36/1/014002.Export: BibTex EndNote
      Citation:
      A. F. Bouhdjar, L. Ayat, AM. Meftah, N. Sengouga, AF. Meftah. Computer modelling and analysis of the photodegradation effect in a-Si:H p-i-n solar cell[J]. Journal of Semiconductors, 2015, 36(1): 014002. doi: 10.1088/1674-4926/36/1/014002

      A. F. Bouhdjar, L. Ayat, AM. Meftah, N. Sengouga, AF. Meftah. Computer modelling and analysis of the photodegradation effect in a-Si:H p-i-n solar cell[J]. J. Semicond., 2015, 36(1): 014002. doi: 10.1088/1674-4926/36/1/014002.
      Export: BibTex EndNote
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      Computer modelling and analysis of the photodegradation effect in a-Si:H p-i-n solar cell

      doi: 10.1088/1674-4926/36/1/014002
      • 1.

        Faculté des Sciences, Laboratoire des Matériaux Semi-conducteurs et Métalliques, Université Mohammed Khider, B.P. 145, Biskra 07000, Algérie

      • 2.

        Laboratory of Semiconductor Devices Physics, Physics Department, University of Béchar, P.O. Box 417, Béchar 08000, Algeria

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      • Corresponding author: E-mail: amjad_meftah@hotmail.com
      • Received Date: 2014-07-15
      • Accepted Date: 2014-08-20
      • Published Date: 2015-01-25

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