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Experimental research of heavy ion and proton induced single event effects for a Bi-CMOS technology DC/DC converter

Anlin He, Gang Guo, Shuting Shi, Dongjun Shen, Jiancheng Liu, Li Cai and Hui Fan

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 Corresponding author: He Anlin, Email: anlinhe@126.com

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Abstract: This paper tested and analyzed heavy ion and proton induced single event effects (SEE) of a commercial DC/DC converter based on a 600 nm Bi-CMOS technology. Heavy ion induced single event transients (SET) testing has been carried out by using the Beijing HI-13 tandem accelerator at China Institute of Atomic Energy. Proton test has been carried out by using the Canadian TRIUMF proton accelerator. Both SET cross section versus linear energy transfer (LET) and proton energy has been measured. The main study conclusions are: (1) the DC/DC is both sensitive to heavy ion and proton radiations although at a pretty large feature size (600 nm), and threshold LET is about 0.06 MeV·mg/cm2; (2) heavy ion SET saturation cross section is about 5 magnitudes order larger than proton SET saturation cross section, which is consistent with the theory calculation result deduced by the RPP model and the proton nuclear reaction model; (3) on-orbit soft error rate (SER) prediction showed, on GEO orbit, proton induced SERs calculated by the heavy ion derived model are 4-5 times larger than those calculated by proton test data.

Key words: heavy ionprotonDC/DC convertersingle event effects



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Fig. 1.  (Color online) Heavy ion irradiation facility at Beijing HI-13 Tandem accelerator.

Fig. 2.  Layout of the 70 MeV beam line at TRIUMF[8].

Fig. 3.  Circuit diagram for tested DC--DC converter[6].

Fig. 4.  Block diagram for heavy ion testing.

Fig. 5.  SET observed in the PGOOD output.

Fig. 6.  SET cross section versus heavy ion LET.

Fig. 7.  SET cross section versus proton energy.

Fig. 8.  From true device to RPP model[11].

Fig. 9.  Reaction cross section of p+$^{28}$Si.

Fig. 10.  Proton (GEO) energy spectrum.

Fig. 11.  Heavy ion (GEO) LET spectrum.

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    Received: 11 June 2015 Revised: Online: Published: 01 November 2015

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      Anlin He, Gang Guo, Shuting Shi, Dongjun Shen, Jiancheng Liu, Li Cai, Hui Fan. Experimental research of heavy ion and proton induced single event effects for a Bi-CMOS technology DC/DC converter[J]. Journal of Semiconductors, 2015, 36(11): 115010. doi: 10.1088/1674-4926/36/11/115010 A L He, G Guo, S T Shi, D J Shen, J C Liu, L Cai, H Fan. Experimental research of heavy ion and proton induced single event effects for a Bi-CMOS technology DC/DC converter[J]. J. Semicond., 2015, 36(11): 115010. doi: 10.1088/1674-4926/36/11/115010.Export: BibTex EndNote
      Citation:
      Anlin He, Gang Guo, Shuting Shi, Dongjun Shen, Jiancheng Liu, Li Cai, Hui Fan. Experimental research of heavy ion and proton induced single event effects for a Bi-CMOS technology DC/DC converter[J]. Journal of Semiconductors, 2015, 36(11): 115010. doi: 10.1088/1674-4926/36/11/115010

      A L He, G Guo, S T Shi, D J Shen, J C Liu, L Cai, H Fan. Experimental research of heavy ion and proton induced single event effects for a Bi-CMOS technology DC/DC converter[J]. J. Semicond., 2015, 36(11): 115010. doi: 10.1088/1674-4926/36/11/115010.
      Export: BibTex EndNote

      Experimental research of heavy ion and proton induced single event effects for a Bi-CMOS technology DC/DC converter

      doi: 10.1088/1674-4926/36/11/115010
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      • Corresponding author: He Anlin, Email: anlinhe@126.com
      • Received Date: 2015-06-11
      • Accepted Date: 2015-07-06
      • Published Date: 2015-01-25

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