| Citation: |
Bao Li, Zhuang Yiqi, Ma Xiaohua, Bao Junlin. RTS Amplitude of 90nm MOS Devices in Sub-Threshold Region[J]. Journal of Semiconductors, 2007, In Press.
Bao L, Zhuang Y Q, Ma X H, Bao J L. RTS Amplitude of 90nm MOS Devices in Sub-Threshold Region[J]. Chin. J. Semicond., 2007, 28(9): 1443.
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RTS Amplitude of 90nm MOS Devices in Sub-Threshold Region
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Abstract
Based on research on the amplitude of RTS in SMIC 90nm CMOS nMOS 0.18μm×0.15μm devices with a 1.4nm gate oxide,an approach to diffusion that fits MOS operation principles better is proposed.Furthermore,a new mechanism in which a border trap changes the charge distribution of the gate and thus influences the channel current is also involved.Research shows that this method not only explains the experiment results,but also can be used to explain the distribution of RTS amplitude.-
Keywords:
- RTS,
- amplitude,
- deep sub-micron,
- MOS
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References
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