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A C-Band Monolithic GaAs PIN Diode SPST Switch

Wu Rufei, Zhang Jian, Yin Junjian and Zhang Haiying

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Abstract: A monolithic single pole single throw (SPST) switch is developed with GaAs PIN diode technology from IMECAS.A novel small signal model of a GaAs PIN diode is developed for circuit simulation.The switch features an on-state insertion loss of less than 1.6dB and a return loss of greater than 10dB while maintaining an off-state isolation of greater than 23dB from 5.5 to 7.5GHz.The measured 1dB power gain compression point is about 20dBm.

Key words: C-bandSPSTswitchesGaAsPIN diodes

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    Received: 18 August 2015 Revised: 16 December 2007 Online: Published: 01 May 2008

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      Wu Rufei, Zhang Jian, Yin Junjian, Zhang Haiying. A C-Band Monolithic GaAs PIN Diode SPST Switch[J]. Journal of Semiconductors, 2008, In Press. Wu R F, Zhang J, Yin J J, Zhang H Y. A C-Band Monolithic GaAs PIN Diode SPST Switch[J]. J. Semicond., 2008, 29(5): 879.Export: BibTex EndNote
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      Wu Rufei, Zhang Jian, Yin Junjian, Zhang Haiying. A C-Band Monolithic GaAs PIN Diode SPST Switch[J]. Journal of Semiconductors, 2008, In Press.

      Wu R F, Zhang J, Yin J J, Zhang H Y. A C-Band Monolithic GaAs PIN Diode SPST Switch[J]. J. Semicond., 2008, 29(5): 879.
      Export: BibTex EndNote

      A C-Band Monolithic GaAs PIN Diode SPST Switch

      • Received Date: 2015-08-18
      • Accepted Date: 2007-10-29
      • Revised Date: 2007-12-16
      • Published Date: 2008-05-05

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