Chin. J. Semicond. > 2005, Volume 26 > Issue 3 > 536-540
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SOI硅膜厚度对RESURF LDMOS参数的影响

孙智林 , 孙伟锋 and 吴建辉

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Abstract: 对SOI LDMOS进行了建模，得到了器件各主要参数的最优值与SOI硅膜厚度的关系式．以此为基础用专业软件Medici和Tsuprem4对器件进行了模拟，得到了最优漂移区浓度、最优击穿电压等参数随SOI硅膜厚度的变化曲线，这些结果对实际器件的设计以及工艺生产具有参考意义．

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    Received: 19 August 2015 Revised: Online: Published: 01 March 2005

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      Article Navigation >  Journal of Semiconductors  > 2005  >  26(3): 536-540
      SOI硅膜厚度对RESURF LDMOS参数的影响[J]. Journal of Semiconductors, 2005, In Press. SOI硅膜厚度对RESURF LDMOS参数的影响[J]. Chin. J. Semicond., 2005, 26(3): 536.Export: BibTex EndNote
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      SOI硅膜厚度对RESURF LDMOS参数的影响[J]. Journal of Semiconductors, 2005, In Press.

      SOI硅膜厚度对RESURF LDMOS参数的影响[J]. Chin. J. Semicond., 2005, 26(3): 536.
      Export: BibTex EndNote
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      SOI硅膜厚度对RESURF LDMOS参数的影响

      • Received Date: 2015-08-19

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