| Citation: |
Liu Ning, Jin Peng, Wu Ju, Wang Zhanguo. 1.3μm Photoluminescence from Multi-Stacked InAs/GaAs Quantum Dot Structure[J]. Journal of Semiconductors, 2007, In Press.
Liu N, Jin P, Wu J, Wang Z G. 1.3μm Photoluminescence from Multi-Stacked InAs/GaAs Quantum Dot Structure[J]. Chin. J. Semicond., 2007, 28(S1): 215.
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1.3μm Photoluminescence from Multi-Stacked InAs/GaAs Quantum Dot Structure
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Abstract
Single layer and five layer stacks of self-organized InAs/GaAs quantum dots(QDs)were grown by molecular beam epitaxy.Room-temperature 1.3μm photoluminescence(PL)was obtained for the five layer stacked sample，showing 180nm peak redshift and remarkable width narrowing，as compared with the PL spectrum for the single layer QD sample.By combining with the transmission electron microscopy measurement，the PL peak redshift and width narrowing are explained in term of the size enhancement of upper layer QDs and energy state coupling among different QD layers. -
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