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Accurate Parameter Extraction of Substrate Resistance in an RF CMOS Model Valid up to 20GHz

Zhao Yuhang, Hu Shaojian and Ren Zheng

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Abstract: An accurate method to extract substrate resistances of RF MOSFETs is proposed.The extraction method is based on equivalent circuit analysis for the PSP model.This method is experimentally validated on 90nm CMOS technology and predicts the output characteristics of MOSFETs accurately up to 20GHz.

Key words: PSP modelRF modelingRF MOSFETssubstrate resistance

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    Received: 18 August 2015 Revised: 26 November 2007 Online: Published: 01 April 2008

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      Zhao Yuhang, Hu Shaojian, Ren Zheng. Accurate Parameter Extraction of Substrate Resistance in an RF CMOS Model Valid up to 20GHz[J]. Journal of Semiconductors, 2008, In Press. Zhao Y H, Hu S J, Ren Z. Accurate Parameter Extraction of Substrate Resistance in an RF CMOS Model Valid up to 20GHz[J]. J. Semicond., 2008, 29(4): 737.Export: BibTex EndNote
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      Zhao Yuhang, Hu Shaojian, Ren Zheng. Accurate Parameter Extraction of Substrate Resistance in an RF CMOS Model Valid up to 20GHz[J]. Journal of Semiconductors, 2008, In Press.

      Zhao Y H, Hu S J, Ren Z. Accurate Parameter Extraction of Substrate Resistance in an RF CMOS Model Valid up to 20GHz[J]. J. Semicond., 2008, 29(4): 737.
      Export: BibTex EndNote

      Accurate Parameter Extraction of Substrate Resistance in an RF CMOS Model Valid up to 20GHz

      • Received Date: 2015-08-18
      • Accepted Date: 2007-08-28
      • Revised Date: 2007-11-26
      • Published Date: 2008-04-03

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