Chin. J. Semicond. > 2005, Volume 26 > Issue 1 > 102-105
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基于干/湿法腐蚀的自对准SiGe HBT器件

刘道广 , 郝跃 , 徐世六 , 李开成 , 李培咸 , 张晓菊 , 张金凤 , 郑雪峰 , 张静 , 刘嵘侃 and 刘伦才

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Abstract: 采用干/湿法腐蚀相结合技术，利用氢氧化钾（KOH）溶液和六氟化硫(SF6)对Si及SiGe材料进行腐蚀，研究自对准Si/SiGe HBT台面器件，获得了fT＝40GHz，fmax＝127.1GHz的结果．

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    Received: 19 August 2015 Revised: Online: Published: 01 January 2005

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      Article Navigation >  Journal of Semiconductors  > 2005  >  26(1): 102-105
      基于干/湿法腐蚀的自对准SiGe HBT器件[J]. Journal of Semiconductors, 2005, In Press. 基于干/湿法腐蚀的自对准SiGe HBT器件[J]. Chin. J. Semicond., 2005, 26(1): 102.Export: BibTex EndNote
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      基于干/湿法腐蚀的自对准SiGe HBT器件[J]. Journal of Semiconductors, 2005, In Press.

      基于干/湿法腐蚀的自对准SiGe HBT器件[J]. Chin. J. Semicond., 2005, 26(1): 102.
      Export: BibTex EndNote
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      基于干/湿法腐蚀的自对准SiGe HBT器件

      • Received Date: 2015-08-19

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