Chin. J. Semicond. > 2006, Volume 27 > Issue 8 > 1447-1452

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Design of a 1200V MR D-RESURF LDMOS and BCD Technology

Qiao Ming, Fang Jian, Xiao Zhiqiang, Zhang Bo and Li Zhaoji

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Abstract: A 1200V multi-region double RESURF LDMOS with a p-type buried layer,which has multiple p regions in the n-drift layer of a single RESURF structure is proposed for improving the surface electric field,increasing the concentration of the n-drift layer,and reducing the on-resistance of LDMOS.A 1200V BCD technology based on standard CMOS technology is realized by adding pn isolation and p-top implantation.Using this technology we develop a power half bridge driver.The breakdown voltages of the LDMOS,nMOS, and pMOS are 1210,43.8,and -27V,respectively, the BVceo of the npn is 76V in the driver.The 1200V BCD technology thus can be used in the design of HVIC.

Key words: MR LDMOS RESURF BCD technology

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    Received: 20 August 2015 Revised: Online: Published: 01 August 2006

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      Qiao Ming, Fang Jian, Xiao Zhiqiang, Zhang Bo, Li Zhaoji. Design of a 1200V MR D-RESURF LDMOS and BCD Technology[J]. Journal of Semiconductors, 2006, In Press. Qiao M, Fang J, Xiao Z Q, Zhang B, Li Z J. Design of a 1200V MR D-RESURF LDMOS and BCD Technology[J]. Chin. J. Semicond., 2006, 27(8): 1447.Export: BibTex EndNote
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      Qiao Ming, Fang Jian, Xiao Zhiqiang, Zhang Bo, Li Zhaoji. Design of a 1200V MR D-RESURF LDMOS and BCD Technology[J]. Journal of Semiconductors, 2006, In Press.

      Qiao M, Fang J, Xiao Z Q, Zhang B, Li Z J. Design of a 1200V MR D-RESURF LDMOS and BCD Technology[J]. Chin. J. Semicond., 2006, 27(8): 1447.
      Export: BibTex EndNote

      Design of a 1200V MR D-RESURF LDMOS and BCD Technology

      • Received Date: 2015-08-20

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