| Citation: |
Liu Lei, Chen Nuofu, Yang Xiaoli, Wang Yu, Gao Fubao. Growth of 0.55eV-GaInAsSb Quaternary Alloy Films for a Thermophotovoltaic Device by Liquid Phase Epitaxy[J]. Journal of Semiconductors, 2008, In Press.
Liu L, Chen N F, Yang X L, Wang Y, Gao F B. Growth of 0.55eV-GaInAsSb Quaternary Alloy Films for a Thermophotovoltaic Device by Liquid Phase Epitaxy[J]. J. Semicond., 2008, 29(7): 1258.
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Growth of 0.55eV-GaInAsSb Quaternary Alloy Films for a Thermophotovoltaic Device by Liquid Phase Epitaxy
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Abstract
Lattice matched Ga1-xInxAsySb1-y quaternary alloy films for thermophotovoltaic cells were successfully grown on n-type GaSb substrates by liquid phase epitaxy.Mirror-like surfaces for the epitaxial layers were achieved and evaluated by atomic force microscopy.The composition of the Ga1-xInxAsySb1-y layer was characterized by energy dispersive X-ray analysis with the result that x=0.2,y=0.17.The absorption edges of the Ga1-xInxAsySb1-y films were determined to be 2.256μm at room temperature by Fourier transform infrared transmission spectrum analysis,corresponding to an energy gap of 0.55eV.Hall measurements show that the highest obtained electron mobility in the undoped p-type samples is 512cm2/(V·s) and the carrier density is 6.1E16 cm-3 at room temperature.Finally,GaInAsSb based thermophotovoltaic cells in different structures with quantum efficiency values of around 60% were fabricated and the spectrum response characteristics of the cells are discussed.-
Keywords:
- GaInAsSb,
- LPE,
- thermophotovoltaic,
- spectrum response
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