Chin. J. Semicond. > 2001, Volume 22 > Issue 9 > 1212-1216

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一种改进的VLSI关键面积计算模型和方法

马佩军 , 郝跃 and 寇芸

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Key words: 缺陷, 关键面积, 成品率

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    Received: 20 August 2015 Revised: Online: Published: 01 September 2001

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      • Received Date: 2015-08-20

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