SEMICONDUCTOR TECHNOLOGY

Simulation and characterization of stress in FinFETs using novel LKMC and nanobeam diffraction methods

Yiluan Guo, Guilei Wang, Chao Zhao and Jun Luo

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 Corresponding author: Jun Luo, E-mail:luojun@ime.ac.cn

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Abstract: A new simulation method and test instrument has been adopted to verify the traditional stress simulation in FinFET. First, a new algorithm named lattice kinetic Monte Carlo (LKMC) is used to simulate the SiGe epitaxy in source/drain regions and the stress distribution is consequently extracted after the LKMC simulation. Systematic comparison between the traditional polyhedron method and the LKMC method is carried out. The results confirm that extracted stress from both methods is consistent, which verifies the validity of traditional polyhedron method for the purpose of simulating stress in FinFET. In the following experiment, p-type FinFETs with SiGe stressors in source/drain regions are fabricated. The nano beam diffraction (NBD) method is employed to characterize the strain in Si fin. The strain value from the NBD test agrees well with the value extracted from traditional polyhedron simulation.

Key words: stresssimulationFinFETNBDverification



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Fig. 1.  Schematic top view of FinFETs and simulated region.

Fig2.  (Color online) (a) and (b) are generated by LKMC, (c) and (d) by polyhedron. (a) shows the simulated shape and a TEM image of actual Si1-xGex epitaxy, while (b) is the side view of simulated shape with noticeable (111) facet. In (c) and (d), a polyhedron is generated to simulate the epitaxial Si1-xGex with all dimensional parameters consistent with those in (a) and (b).

Fig3.  (Color online) The stressXX distribution in the cross-section of the fin beneath the poly-Si dummy gate (hidden for clarity) simulated by (a) LKMC and (b) polyhedron method.

Fig4.  (Color online) The stress distribution along the fin beneath the poly-Si dummy gate simulated by (a) LKMC and (b) polyhedron method.

Fig5.  (Color online) The 1D-stress profiles along the fin simulated using LKMC (black line) and polyhedron (red line) method. StressXX is extracted at 5 nm beneath the fin top.

Fig6.  (Color online) The 1D-stress profiles from the top to the bottom of the fin simulated using LKMC (black line) and polyhedron method (red line).

Fig7.  TEM picture of SiGe epitaxy in source/drain of p-type FinFET.

Fig8.  Schematic picture of NBD test.

Fig9.  Comparison between NBD test results and simulation.

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Table 1.   Dimensional parameters of FinFET used in this work.

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Table 2.   Dimensional parameters of FinFET for simulation.

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    Received: 16 December 2014 Revised: Online: Published: 01 August 2015

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      Yiluan Guo, Guilei Wang, Chao Zhao, Jun Luo. Simulation and characterization of stress in FinFETs using novel LKMC and nanobeam diffraction methods[J]. Journal of Semiconductors, 2015, 36(8): 086001. doi: 10.1088/1674-4926/36/8/086001 Y L Guo, G L Wang, C Zhao, J Luo. Simulation and characterization of stress in FinFETs using novel LKMC and nanobeam diffraction methods[J]. J. Semicond., 2015, 36(8): 086001. doi: 10.1088/1674-4926/36/8/086001.Export: BibTex EndNote
      Citation:
      Yiluan Guo, Guilei Wang, Chao Zhao, Jun Luo. Simulation and characterization of stress in FinFETs using novel LKMC and nanobeam diffraction methods[J]. Journal of Semiconductors, 2015, 36(8): 086001. doi: 10.1088/1674-4926/36/8/086001

      Y L Guo, G L Wang, C Zhao, J Luo. Simulation and characterization of stress in FinFETs using novel LKMC and nanobeam diffraction methods[J]. J. Semicond., 2015, 36(8): 086001. doi: 10.1088/1674-4926/36/8/086001.
      Export: BibTex EndNote

      Simulation and characterization of stress in FinFETs using novel LKMC and nanobeam diffraction methods

      doi: 10.1088/1674-4926/36/8/086001
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      Project supported by the “National S&T Major Project 02”, the Opening Project of Microelectronics Devices & Bulk Si FinFET Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences (No. 2013ZX02303007-001).

      More Information
      • Corresponding author: E-mail:luojun@ime.ac.cn
      • Received Date: 2014-12-16
      • Accepted Date: 2015-03-13
      • Published Date: 2015-01-25

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