Chin. J. Semicond. > 2005, Volume 26 > Issue S1 > 155-157
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Characteristics Comparison of AlGaN/GaN HFET for Three Variant Vertical Structure

Lü Changzhi, Feng Shiwei, Wang Dongfeng, Zhang Xiaoling, Xie Xuesong, He Yan, Zhang Hao, Xu Liguo, Yuan Mingwen, Li Xiaobai and Zeng Qingming

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Abstract: By the compared studies on the three AlGaN/GaN HFET structures with normal,inverted,and double hetero-structures,it is found that the normal structure is the most simple one and is easily controllable for layer growth.The characteristics of inverted structure are poorer than one with normal structure,and those characteristics with double hetero-structure are better than the ones with normal and inverted structure,but its layer growth is much more complicated.

Key words: AlGaN/GaN,  HFET,  inverted structure,  double hetero-structure

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    Received: 19 August 2015 Revised: Online: Published: 01 December 2005

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      Article Navigation >  Journal of Semiconductors  > 2005  >  26(S1): 155-157
      Lü Changzhi, Feng Shiwei, Wang Dongfeng, Zhang Xiaoling, Xie Xuesong, He Yan, Zhang Hao, Xu Liguo, Yuan Mingwen, Li Xiaobai, Zeng Qingming. Characteristics Comparison of AlGaN/GaN HFET for Three Variant Vertical Structure[J]. Journal of Semiconductors, 2005, In Press. Lü C, Feng S W, Wang D F, Zhang X L, Xie X S, He Y, Zhang H, Xu L G, Yuan M W, Li X B, Zeng Q M. Characteristics Comparison of AlGaN/GaN HFET for Three Variant Vertical Structure[J]. Chin. J. Semicond., 2005, 26(13): 155.Export: BibTex EndNote
      Citation:
      Lü Changzhi, Feng Shiwei, Wang Dongfeng, Zhang Xiaoling, Xie Xuesong, He Yan, Zhang Hao, Xu Liguo, Yuan Mingwen, Li Xiaobai, Zeng Qingming. Characteristics Comparison of AlGaN/GaN HFET for Three Variant Vertical Structure[J]. Journal of Semiconductors, 2005, In Press.

      Lü C, Feng S W, Wang D F, Zhang X L, Xie X S, He Y, Zhang H, Xu L G, Yuan M W, Li X B, Zeng Q M. Characteristics Comparison of AlGaN/GaN HFET for Three Variant Vertical Structure[J]. Chin. J. Semicond., 2005, 26(13): 155.
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      Characteristics Comparison of AlGaN/GaN HFET for Three Variant Vertical Structure

      • School of Electronic Information & Control Engineering,Beijing University of Technology,Beijing 100022,China

      • School of Electronic Information & Control Engineering,Beijing University of Technology,Beijing 100022,China

      • School of Electronic Information & Control Engineering,Beijing University of Technology,Beijing 100022,China

      • School of Electronic Information & Control Engineering,Beijing University of Technology,Beijing 100022,China

      • School of Electronic Information & Control Engineering,Beijing University of Technology,Beijing 100022,China

      • School of Electronic Information & Control Engineering,Beijing University of Technology,Beijing 100022,China

      • School of Electronic Information & Control Engineering,Beijing University of Technology,Beijing 100022,China

      • School of Electronic Information & Control Engineering,Beijing University of Technology,Beijing 100022,China

      • The 13th Institute of China Electronic Technology Group Corporation,Shijiazhuang 050051,China

      • The 13th Institute of China Electronic Technology Group Corporation,Shijiazhuang 050051,China

      • The 13th Institute of China Electronic Technology Group Corporation,Shijiazhuang 050051,China

      • Received Date: 2015-08-19

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