Chin. J. Semicond. > 2004, Volume 25 > Issue 7 > 836-840

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双异质结双平面掺杂HEMT器件的电荷控制模型

陈震 , 刘新宇 and 吴德馨

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Key words: 高电子迁移率晶体管(HEMT), 电荷控制模型, 异质结, 二维电子气, 双平面掺杂

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    Received: 19 August 2015 Revised: Online: Published: 01 July 2004

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      • Received Date: 2015-08-19

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