J. Semicond. > 2018, Volume 39 > Issue 3 > 033003, doi: 10.1088/1674-4926/39/3/033003
|

SEMICONDUCTOR MATERIALS

Investigation on the InAs1–xSbx epilayers growth on GaAs (001) substrate by molecular beam epitaxy

D. Benyahia1, , Ł. Kubiszyn2, K. Michalczewski1, A. Kębłowski2, P. Martyniuk1, J. Piotrowski2 and A. Rogalski1

+ Author Affiliations

 Corresponding author: D. Benyahia, Email: djalelbeny@gmail.com

PDF

Turn off MathJax

Abstract: Undoped and Be-doped InAs1–xSbx (0 ≤ x ≤ 0.71) epitaxial layers were successfully grown on lattice mismatched semi-insulating GaAs (001) substrate with 2° offcut towards <110>. The effect of the InAs buffer layer on the quality of the grown layers was investigated. Moreover, the influence of Sb/In flux ratio on the Sb fraction was examined. Furthermore, we have studied the defects distribution along the depth of the InAsSb epilayers. In addition, the p-type doping of the grown layers was explored. The InAsSb layers were assessed by X-ray diffraction, Nomarski microscopy, high resolution optical microscopy and Hall effect measurement. The InAs buffer layer was found to be beneficial for the growth of high quality InAsSb layers. The X-ray analysis revealed a full width at half maximum (FWHM) of 571 arcsec for InAs 0.87Sb0.13. It is worth noting here that the Hall concentration (mobility) as low (high) as 5 × 1016 cm−3 (25000 cm2V−1s−1) at room temperature, has been acquired.

Key words: MBE, InAsSb, Hall effect, GaAs, X-ray diffraction



[1]
Wooley J C, Warner J. Optical energy-gap variation in InAs-InSb alloys. Can J Phys, 1964, 42: 1879 doi: 10.1139/p64-176
[2]
Bethea C G, Yen M Y, Levine B F, et al. Long wavelength InAs1–xSbx/GaAs detectors prepared by molecular beam epitaxy. Appl Phys Lett, 1987, 51: 1431 doi: 10.1063/1.98647
[3]
Dobbelaere W, De Boeck J, Borghs G. Growth and optical characterization of InAs1–xSbx (0 ≤ x ≤ 1) on GaAs and GaAs-coated Si by molecular beam epitaxy. Appl Phys Lett, 1989, 55: 1856 doi: 10.1063/1.102187
[4]
Dobbelaere W, De Boeck J, Bruynseraede C, et al. InAsSb light emitting diodes and their applications to infrared gas senors. Electron Let, 1993, 29: 890 doi: 10.1049/el:19930594
[5]
Biefeld R M. The metal–organic chemical vapor deposition and properties of III–V antimony-based semiconductor materials. Mater Sci Eng, 2002, R 36: 105
[6]
Yen M Y, People R, Wecht K W. Long wavelength (3–5 and 8–12 μm) photoluminescence of InAs1–xSbx grown on (100) GaAs by molecular beam epitaxy. J Appl Phys, 1988, 64: 952 doi: 10.1063/1.341904
[7]
Gao H, Wang W, Jiang Z, et al. The growth parameter influence on the crystal quality of InAsSb grown on GaAs by molecular beam epitaxy. J Cryst Growth, 2007, 308: 406 doi: 10.1016/j.jcrysgro.2007.08.018
[8]
Nakamura S, Jayavel P, Koyama T, et al. Investigations on the effect of InSb and InAsSb step-graded buffer layers in InAs0.5Sb0.5 epilayers grown on GaAs (001). J Cryst Growth, 2007, 300: 497 doi: 10.1016/j.jcrysgro.2006.11.298
[9]
Yen M Y, Levine B F, Bethea C G, et al. Molecular beam epitaxial growth and optical properties of InAs1–xSbx in 8–12 μm wavelength range. Appl Phys Lett, 1987, 50: 927 doi: 10.1063/1.97982
[10]
Chyi J I, Kalem S, Kumar N S, et al. Growth of InSb and InAs1–xSbx on GaAs by molecular beam epitaxy. Appl Phys Lett, 1988, 53: 1092 doi: 10.1063/1.100031
[11]
Tsukamoto S, Bhattacharya P, Chen Y C, et al. Transport properties of InAs1–xSbx (0 ≤ x ≤ 0.55) on InP grown by molecular beam epitaxy. J Appl Phys, 1990, 67: 6819 doi: 10.1063/1.345071
[12]
Chiang P K, Bedair S M. Growth of InSb and InAs1–xSbx by OM-CVD. J Electrochem Soc, 1984, 131: 2422 doi: 10.1149/1.2115308
[13]
Chiang P K, Bedair S M. p–n junction in InSb and InAs1–xSbx by metalorganic chemical vapor deposition. Appl Phys Lett, 1985, 46: 383 doi: 10.1063/1.95640
[14]
Biefeld R M, Hills C R, Lee S R. Strain relief in compositionally graded InAs1–xSbx buffer layers and InAxSb1–x/InSb strained-layer superlattices grown by MOCVD. J Cryst Growth, 1988, 91: 515 doi: 10.1016/0022-0248(88)90119-4
[15]
Kim J D, Wu D, Wojkowski J, et al. Long-wavelength InAsSb photoconductors operated at near room temperatures (200–300 K). Appl Phys Lett, 1996, 68: 99 doi: 10.1063/1.116784
[16]
Mao Y, Krier A. Liquid phase epitaxial growth and photoluminescence of InAsSb grown on GaSb substrates from antimony solution. J Cryst Growth, 1993, 133: 108 doi: 10.1016/0022-0248(93)90110-I
[17]
Gao F, Chen N, Liu L, et al. InAs0.3Sb0.7 films grown on (100) GaSb substrates with a buffer layer by liquid phase epitaxy. J Cryst Growth, 2007, 304: 472 doi: 10.1016/j.jcrysgro.2007.03.011
[18]
Shanabrook B V, Waterman J R, Davis J L, et al. Large temperature changes induced by molecular beam epitaxial growth on radiatively heated substrates. Appl Phys Lett, 1992, 61: 2338 doi: 10.1063/1.108236
[19]
Benyahia D, Kubiszyn L, Michalczewski K, et al. Molecular beam epitaxial growth and characterization of InAs layers on GaAs (001) substrate. Opt Quant Elect, 2016, 48: 428 doi: 10.1007/s11082-016-0698-4
[20]
Marcadet X, Rakovska A, Prevot I, et al. MBE growth of room-temperature InAsSb mid-infrared detectors. J Cryst Growth, 2001, 227: 609
[21]
Sun Q L, Wang L, Wang W Q, et al. Growth and characterization of InAs1–xsbx with different sb compositions on GaAs substrates. Chin Phys Lett, 2015, 32: 106801 doi: 10.1088/0256-307X/32/10/106801
[22]
Egan R J, Chin V W L, Tansley T L. Dislocation scattering effects on electron mobility of InAsSb. J Appl Phys, 1994, 75: 2473 doi: 10.1063/1.356244
[23]
Petriz R L. Theory of an experiment for measuring the mobility and density of carriers in the space-charge region of a semiconductor surface. Phys Rev, 1958, 110: 1254 doi: 10.1103/PhysRev.110.1254
[24]
Shinde U P. Hall coefficient, mobility and carrier concentration as a function of composition and thickness of Zn–Te thin films. Adv Appl Sci Res, 2015, 6: 215
Fig. 1.  (Color online) InAs1–xSbx layer RHEED pattern (a) (× 1) pattern and (b) (× 3) pattern.

DownLoad: Full-Size Img PowerPoint
Fig. 2.  The Nomarski optical microscopy pictures from (a) set A with x = 0.13, (b) set B with x = 0.13, and (c) set C with x = 0.71.

DownLoad: Full-Size Img PowerPoint
Fig. 3.  (Color online) (a) (004) X-ray InAsSb layers (004) 2θ–ω scan and (b) the variation of the FWHM of the (004) InAsSb peaks measured in ω direction.

DownLoad: Full-Size Img PowerPoint
Fig. 4.  (Color online) The composition x as a function of Sb/In flux ratio of InAs1–xSbx grown at 400 °C. The As flux is 1.06 × 10−5 Torr.

DownLoad: Full-Size Img PowerPoint
Fig. 6.  (Color online) The theoretical Hall carriers, electrons, and holes concentration of Be-doped InAsSb layer with a doping level of 3.8 × 1017 cm−3.

DownLoad: Full-Size Img PowerPoint
Fig. 5.  (Color online) (a) Hall concentration and (b) Hall mobility of 5 μm-thick InAsSb epilayers measured at 80 K and room temperature.

DownLoad: Full-Size Img PowerPoint
Fig. 7.  (Color online) (a) Differential Hall concentration and (b) mobility of a 5.3 μm-thick InAs0.94Sb0.06. The etched thickness is 2.2 μm.

DownLoad: Full-Size Img PowerPoint

Table 1.   InAs1–xSbx samples grown on GaAs (001) substrate.

Sets Buffer layer Doping Composition x
A InAs – 0.13; 0.06; 0
B – – 0.13; 0.27
C – Be 0.68; 0.71
DownLoad: CSV
[1]
Wooley J C, Warner J. Optical energy-gap variation in InAs-InSb alloys. Can J Phys, 1964, 42: 1879 doi: 10.1139/p64-176
[2]
Bethea C G, Yen M Y, Levine B F, et al. Long wavelength InAs1–xSbx/GaAs detectors prepared by molecular beam epitaxy. Appl Phys Lett, 1987, 51: 1431 doi: 10.1063/1.98647
[3]
Dobbelaere W, De Boeck J, Borghs G. Growth and optical characterization of InAs1–xSbx (0 ≤ x ≤ 1) on GaAs and GaAs-coated Si by molecular beam epitaxy. Appl Phys Lett, 1989, 55: 1856 doi: 10.1063/1.102187
[4]
Dobbelaere W, De Boeck J, Bruynseraede C, et al. InAsSb light emitting diodes and their applications to infrared gas senors. Electron Let, 1993, 29: 890 doi: 10.1049/el:19930594
[5]
Biefeld R M. The metal–organic chemical vapor deposition and properties of III–V antimony-based semiconductor materials. Mater Sci Eng, 2002, R 36: 105
[6]
Yen M Y, People R, Wecht K W. Long wavelength (3–5 and 8–12 μm) photoluminescence of InAs1–xSbx grown on (100) GaAs by molecular beam epitaxy. J Appl Phys, 1988, 64: 952 doi: 10.1063/1.341904
[7]
Gao H, Wang W, Jiang Z, et al. The growth parameter influence on the crystal quality of InAsSb grown on GaAs by molecular beam epitaxy. J Cryst Growth, 2007, 308: 406 doi: 10.1016/j.jcrysgro.2007.08.018
[8]
Nakamura S, Jayavel P, Koyama T, et al. Investigations on the effect of InSb and InAsSb step-graded buffer layers in InAs0.5Sb0.5 epilayers grown on GaAs (001). J Cryst Growth, 2007, 300: 497 doi: 10.1016/j.jcrysgro.2006.11.298
[9]
Yen M Y, Levine B F, Bethea C G, et al. Molecular beam epitaxial growth and optical properties of InAs1–xSbx in 8–12 μm wavelength range. Appl Phys Lett, 1987, 50: 927 doi: 10.1063/1.97982
[10]
Chyi J I, Kalem S, Kumar N S, et al. Growth of InSb and InAs1–xSbx on GaAs by molecular beam epitaxy. Appl Phys Lett, 1988, 53: 1092 doi: 10.1063/1.100031
[11]
Tsukamoto S, Bhattacharya P, Chen Y C, et al. Transport properties of InAs1–xSbx (0 ≤ x ≤ 0.55) on InP grown by molecular beam epitaxy. J Appl Phys, 1990, 67: 6819 doi: 10.1063/1.345071
[12]
Chiang P K, Bedair S M. Growth of InSb and InAs1–xSbx by OM-CVD. J Electrochem Soc, 1984, 131: 2422 doi: 10.1149/1.2115308
[13]
Chiang P K, Bedair S M. p–n junction in InSb and InAs1–xSbx by metalorganic chemical vapor deposition. Appl Phys Lett, 1985, 46: 383 doi: 10.1063/1.95640
[14]
Biefeld R M, Hills C R, Lee S R. Strain relief in compositionally graded InAs1–xSbx buffer layers and InAxSb1–x/InSb strained-layer superlattices grown by MOCVD. J Cryst Growth, 1988, 91: 515 doi: 10.1016/0022-0248(88)90119-4
[15]
Kim J D, Wu D, Wojkowski J, et al. Long-wavelength InAsSb photoconductors operated at near room temperatures (200–300 K). Appl Phys Lett, 1996, 68: 99 doi: 10.1063/1.116784
[16]
Mao Y, Krier A. Liquid phase epitaxial growth and photoluminescence of InAsSb grown on GaSb substrates from antimony solution. J Cryst Growth, 1993, 133: 108 doi: 10.1016/0022-0248(93)90110-I
[17]
Gao F, Chen N, Liu L, et al. InAs0.3Sb0.7 films grown on (100) GaSb substrates with a buffer layer by liquid phase epitaxy. J Cryst Growth, 2007, 304: 472 doi: 10.1016/j.jcrysgro.2007.03.011
[18]
Shanabrook B V, Waterman J R, Davis J L, et al. Large temperature changes induced by molecular beam epitaxial growth on radiatively heated substrates. Appl Phys Lett, 1992, 61: 2338 doi: 10.1063/1.108236
[19]
Benyahia D, Kubiszyn L, Michalczewski K, et al. Molecular beam epitaxial growth and characterization of InAs layers on GaAs (001) substrate. Opt Quant Elect, 2016, 48: 428 doi: 10.1007/s11082-016-0698-4
[20]
Marcadet X, Rakovska A, Prevot I, et al. MBE growth of room-temperature InAsSb mid-infrared detectors. J Cryst Growth, 2001, 227: 609
[21]
Sun Q L, Wang L, Wang W Q, et al. Growth and characterization of InAs1–xsbx with different sb compositions on GaAs substrates. Chin Phys Lett, 2015, 32: 106801 doi: 10.1088/0256-307X/32/10/106801
[22]
Egan R J, Chin V W L, Tansley T L. Dislocation scattering effects on electron mobility of InAsSb. J Appl Phys, 1994, 75: 2473 doi: 10.1063/1.356244
[23]
Petriz R L. Theory of an experiment for measuring the mobility and density of carriers in the space-charge region of a semiconductor surface. Phys Rev, 1958, 110: 1254 doi: 10.1103/PhysRev.110.1254
[24]
Shinde U P. Hall coefficient, mobility and carrier concentration as a function of composition and thickness of Zn–Te thin films. Adv Appl Sci Res, 2015, 6: 215

    • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 3652 Times PDF downloads: 65 Times Cited by: 0 Times

    History

    Received: 02 June 2017 Revised: 02 October 2017 Online: Accepted Manuscript: 11 November 2017Uncorrected proof: 24 January 2018Published: 01 March 2018

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Send
      Article Navigation >  Journal of Semiconductors  > 2018  >  39(3): 033003
      D. Benyahia, Ł. Kubiszyn, K. Michalczewski, A. Kębłowski, P. Martyniuk, J. Piotrowski, A. Rogalski. Investigation on the InAs1–xSbx epilayers growth on GaAs (001) substrate by molecular beam epitaxy[J]. Journal of Semiconductors, 2018, 39(3): 033003. doi: 10.1088/1674-4926/39/3/033003 D. Benyahia, Ł. Kubiszyn, K. Michalczewski, A. Kębłowski, P. Martyniuk, J. Piotrowski, A. Rogalski. Investigation on the InAs1–xSbx epilayers growth on GaAs (001) substrate by molecular beam epitaxy[J]. J. Semicond., 2018, 39(3): 033003. doi: 10.1088/1674-4926/39/3/033003.Export: BibTex EndNote
      Citation:
      D. Benyahia, Ł. Kubiszyn, K. Michalczewski, A. Kębłowski, P. Martyniuk, J. Piotrowski, A. Rogalski. Investigation on the InAs1–xSbx epilayers growth on GaAs (001) substrate by molecular beam epitaxy[J]. Journal of Semiconductors, 2018, 39(3): 033003. doi: 10.1088/1674-4926/39/3/033003

      D. Benyahia, Ł. Kubiszyn, K. Michalczewski, A. Kębłowski, P. Martyniuk, J. Piotrowski, A. Rogalski. Investigation on the InAs1–xSbx epilayers growth on GaAs (001) substrate by molecular beam epitaxy[J]. J. Semicond., 2018, 39(3): 033003. doi: 10.1088/1674-4926/39/3/033003.
      Export: BibTex EndNote
      shu

      Investigation on the InAs1–xSbx epilayers growth on GaAs (001) substrate by molecular beam epitaxy

      doi: 10.1088/1674-4926/39/3/033003
      • 1.

        Institute of Applied Physics, Military University of Technology, 2 Kaliskiego Str., 00-908 Warsaw, Poland

      • 2.

        Vigo System S.A., 129/133 Poznańska Str., 05-850 Ożarów Mazowiecki, Poland

      Funds:

      Project supported by the Polish National Science Centre (No. UMO-2015/17/B/ST5/01753).

      More Information
      • Corresponding author: Email: djalelbeny@gmail.com
      • Received Date: 2017-06-02
      • Revised Date: 2017-10-02
        • Available Online: 2018-03-01
      • Published Date: 2018-03-01

      Catalog

        Journal of Semiconductors © 2017 All Rights Reserved   京ICP备05085259号-2

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return