SEMICONDUCTOR MATERIALS

Redistribution of carbon atoms in Pt substrate for high quality monolayer graphene synthesis

Yinying Li, Xiaoming Wu, Huaqiang Wu and He Qian

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 Corresponding author: Huaqiang Wu, E-mail: wuhq@tsinghua.edu.cn

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Abstract: The two-dimensional material graphene shows its extraordinary potential in many application fields. As the most effective method to synthesize large-area monolayer graphene, chemical vapor deposition has been well developed; however, it still faces the challenge of a high occurrence of multilayer graphene, which causes the small effective area of monolayer graphene. This phenomenon limits its applications in which only a big size of monolayer graphene is needed. In this paper, by introducing a redistribution stage after the decomposition of carbon source gas to redistribute the carbon atoms dissolved in Pt foils, the number of multilayer flakes on the monolayer graphene decreases. The mean area of monolayer graphene can be extended to about 16 000 μm2, which is eight times larger than that of the graphene grown without the redistribution stage. A Raman spectrograph is used to demonstrate the high quality of the monolayer graphene grown by the improved process.

Key words: graphene synthesisplatinumredistribution stagemonolayer grapheme



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Fig. 1.  (a) Curves Ⅰ and Ⅱ are the temperature profiles for graphene synthesis on polycrystalline Pt foils without and with a redistribution stage. (b) Schematic diagram of the two different graphene growth processes.

Fig. 2.  Typical SEM images of graphene on platinum synthesized by the process without the redistribution stage. (a) Multilayer graphene flakes. (b) Dense distribution of few-layer graphene. The scale bars are 50 $\mu $m and 5 $\mu $m in a and b respectively. (c) Raman spectra of the target spots marked by the circle in SEM image (a) and (b), after being transferred to 90 nm SiO$_{2}$/Si.

Fig. 3.  SEM images of graphene grown on polycrystalline platinum foils. (a) Graphene synthesized without the redistribution stage. Graphene synthesized by the improved method with (b) 2 min, (c) 20 min, (d) 40 min, and (e) 60 min of the carbon atom redistribution stage. (a')-(e') Images with larger magnification corresponding to (a)-(e), respectively. The scale bars in (a)-(e) are 200 $\mu $m, and 50 $\mu $m in (a')-(e').

Fig. 4.  (a) Relationship between parameter $N_{\rm multi}$ and $A_{\rm ave multi}$ and the duration of the redistribution stage. (b) Relationship between parameter $R_{\rm cov}$ and $A_{\rm ave mono}$ and the duration of the redistribution stage.

Fig. 5.  (a) Optical image of graphene transferred on 90 nm SiO$_2$/Si substrate. (b) Raman spectrum at the place labeled by the circle in (a). (c) FWHM of 2D and G peaks for 18 random sampling points of monolayer graphene.

Table 1.   Graphene growth parameters.

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    Received: 05 June 2014 Revised: Online: Published: 01 January 2015

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      Yinying Li, Xiaoming Wu, Huaqiang Wu, He Qian. Redistribution of carbon atoms in Pt substrate for high quality monolayer graphene synthesis[J]. Journal of Semiconductors, 2015, 36(1): 013005. doi: 10.1088/1674-4926/36/1/013005 Y Y Li, X M Wu, H Q Wu, H Qian. Redistribution of carbon atoms in Pt substrate for high quality monolayer graphene synthesis[J]. J. Semicond., 2015, 36(1): 013005. doi: 10.1088/1674-4926/36/1/013005.Export: BibTex EndNote
      Citation:
      Yinying Li, Xiaoming Wu, Huaqiang Wu, He Qian. Redistribution of carbon atoms in Pt substrate for high quality monolayer graphene synthesis[J]. Journal of Semiconductors, 2015, 36(1): 013005. doi: 10.1088/1674-4926/36/1/013005

      Y Y Li, X M Wu, H Q Wu, H Qian. Redistribution of carbon atoms in Pt substrate for high quality monolayer graphene synthesis[J]. J. Semicond., 2015, 36(1): 013005. doi: 10.1088/1674-4926/36/1/013005.
      Export: BibTex EndNote

      Redistribution of carbon atoms in Pt substrate for high quality monolayer graphene synthesis

      doi: 10.1088/1674-4926/36/1/013005
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      Project supported by the National Natural Science Foundation of China (No. 61377106).

      More Information
      • Corresponding author: E-mail: wuhq@tsinghua.edu.cn
      • Received Date: 2014-06-05
      • Accepted Date: 2014-07-29
      • Published Date: 2015-01-25

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